Journal ArticleDOI
50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching
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TLDR
In this paper, a trilevel electron beam resist has been used to make 25nm metal features on thick silicon substrates using this metal as a mask for reactive ion etching, silicon structures 0.33 μm deep have been fabricated.Abstract:
A trilevel electron beam resist has been used to make 25‐nm metal features on thick silicon substrates. Using this metal as a mask for reactive ion etching, silicon structures 0.33 μm deep have been fabricated. The resist consists of a thin upper layer of polymethylmethacrylate (PMMA), a middle layer of Ge, and a lower layer of co‐polymer of methylmethacrylate and methacrylic acid, P(MMA/MAA). High‐resolution patterns are written in the upper resist layer and are transferred to the lower layers by reactive‐ion etching. Completed resist stencils have 300‐nm high walls with near‐vertical profiles and are suitable for liftoff processing.read more
Citations
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Journal ArticleDOI
Electrical detection of spin precession in a metallic mesoscopic spin valve
TL;DR: It is shown that the spin direction can be controlled by inducing a coherent spin precession caused by an applied perpendicular magnetic field, and the output voltage of the device is sensitive to the spin degree of freedom only.
Patent
Fine pattern forming method
TL;DR: In this paper, a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
Book ChapterDOI
Chapter 4 - Nanometer-Scale Fabrication Techniques
Richard Howard,Daniel E. Prober +1 more
TL;DR: In this article, the authors provide an overview of the new techniques for fabrication at a size scale below 100 nm and present the three-dimensional techniques that seem to permit fabrication of structures smaller than 10 nm.
Journal ArticleDOI
10‐nm linewidth electron beam lithography on GaAs
TL;DR: In this article, a single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2-nm−diam electron beam with energies ranging from 20 to 120 keV.
Journal ArticleDOI
Rapid electroplating of insulators.
TL;DR: An electroplating technique that permits coating of insulating substrates with metals having controlled grain size, thickness and growth speed is described, with the basis of this approach the progressive outward growth of the metal from an electrode in contact with the substrate.
References
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Journal ArticleDOI
Offset masks for lift‐off photoprocessing
TL;DR: In this article, a technique using photolithography to produce submicron-scale thin-film structures and simple multilevel structures by single mask lift-off processing is described.
Journal ArticleDOI
250‐Å linewidths with PMMA electron resist
TL;DR: In this article, the authors used high-resolution scanning transmission electron microscopy (STEM) to expose the resist and the samples were mounted on 60 nm-thick Si3N4 membrane substrates.
Journal ArticleDOI
High resolution, steep profile resist patterns
J. M. Moran,D. Maydan +1 more
TL;DR: In this paper, a 2.6 μm-thick organic layer was used to generate steep profile patterns for photo and electron lithography, which reduced the need for thick resist patterns for the lithography step and ensured high resolution combined with good step coverage.
Journal ArticleDOI
Resolution Limits of PMMA Resist for Exposure with 50 kV Electrons
TL;DR: In this paper, the authors used an electron beam with a diameter below 1 nm to measure the resolution of PMMA, and the exposure distribution was determined by measuring the exposure dose needed to open up lines with widths smaller than the width of the distribution.
Journal ArticleDOI
Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
E. L. Hu,R. E. Howard +1 more
TL;DR: In this article, the authors describe the reactive ion etching of GaAs, InP, and their derivative compounds using an etch gas composed of CCl2F2, O2, and argon.