Journal ArticleDOI
250‐Å linewidths with PMMA electron resist
TLDR
In this article, the authors used high-resolution scanning transmission electron microscopy (STEM) to expose the resist and the samples were mounted on 60 nm-thick Si3N4 membrane substrates.Abstract:
25‐nm‐wide lines and spaces have been fabricated in 22.5‐nm‐thick films of PdAu (40 : 60) using electron‐beam exposure and polymethylmethacrylate (PMMA) resist. A high‐resolution scanning transmission electron microscopy (STEM) was used to expose the resist and the samples were mounted on 60‐nm‐thick Si3N4 membrane substrates. Previously, the smallest metal structures formed with a resist process were 60 nm wide with spaces between the lines several times larger than the lines. The results presented here show that 25‐nm lines can be fabricated with a center to center spacing of 50 nm.read more
Citations
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Journal ArticleDOI
Imprint Lithography with 25-Nanometer Resolution
TL;DR: In this paper, a high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated, which uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness.
Journal ArticleDOI
Imprint lithography with sub-10 nm feature size and high throughput
Stephen Y. Chou,Peter R. Krauss +1 more
TL;DR: Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been developed and investigated as discussed by the authors, which has demonstrated 10 nm feature size, 40 nm pitch, vertical and smooth sidewalls, and nearly 90° corners.
Journal ArticleDOI
Microscopic patterning of orientated mesoscopic silica through guided growth
TL;DR: In this paper, an electric field applied tangentially to the surface within the microcapillaries induces electro-osmotic flow, and also enhances the rates of silica polymerization around the tubules by localized Joule heating.
Patent
Release surfaces, particularly for use in nanoimprint lithography
TL;DR: In this article, a mold having at least one protruding feature is pressed into a thin film carried on a substrate, and the mold is removed from the film, and then the patterns in the mold are replaced in the thin film, completing the lithography.
References
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Journal ArticleDOI
A Water‐Amine‐Complexing Agent System for Etching Silicon
R. M. Finne,D. L Klein +1 more
TL;DR: In this article, the silicon etch rate has been investigated as a function of variations in both solution and material parameters, and a parallel investigation has been concerned with the etching characteristics of silicon samples coated with silicon dioxide films.
Journal ArticleDOI
Anisotropic Etching of Silicon
TL;DR: In this article, a ternary liquid etchant solution for silicon, consisting of hydrazine, iso-2propyl alcohol (IPA), and water has been studied in some detail.
Journal ArticleDOI
Electron‐beam fabrication of 80‐Å metal structures
TL;DR: In this article, a contamination resist pattern is written with a 5.A 45-keV scanning electron beam in a 100-A-thick Au-Pd film supported by a carbon foil.
Journal ArticleDOI
A scanning microscope with 5 A resolution.
Albert V. Crewe,J. Wall +1 more
TL;DR: From this work it appears that scanning microscopes are capable of the same performance as conventional electron microscopes and they possess some advantages over those instruments.
Journal ArticleDOI
High-resolution positive resists for electron-beam exposure
TL;DR: In this paper, the utility of four newly proposed positive resists whose processing combines electron-beam-induced degradation of certain polymers and, subsequently, in situ fractionation according to molecular weight is examined.