Proceedings ArticleDOI
A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station
N. Ui,H. Sano,Seigo Sano +2 more
- pp 1259-1262
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TLDR
In this paper, a 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed, which achieved 42% efficiency and -50 dBc ACLR at the average power of 49 dBm(80 W).Abstract:
A 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-stage amplifier up with the 30 W driver stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.read more
Citations
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Journal ArticleDOI
A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
TL;DR: In this paper, a three-way Doherty 100-W GaN power amplifier at 2.14 GHz was presented, where mixed-signal techniques were utilized for uncompromised control of the amplifier stages to optimize efficiency, as well as linearity.
Journal ArticleDOI
Efficiency Enhancement of Doherty Amplifier Through Mitigation of the Knee Voltage Effect
TL;DR: In this paper, an approach to maximize the efficiency of a Doherty power amplifier (PA) with the knee voltage effect was presented, and the optimized amplifier was analyzed and simulated in terms of its load modulation behavior, efficiency, and output power.
Journal ArticleDOI
Design Optimization and DPD Linearization of GaN-Based Unsymmetrical Doherty Power Amplifiers for 3G Multicarrier Applications
TL;DR: In this article, a design optimization approach for gallium-nitride (GaN)-based Doherty power amplifiers (PAs) is proposed to enhance linearizability and maximize the power-added efficiency (PAE) for multicarrier wideband code division multiple access (WCDMA) applications.
Journal ArticleDOI
250 W HVHBT Doherty With 57% WCDMA Efficiency Linearized to ${-}$ 55 dBc for 2c11 6.5 dB PAR
Craig Steinbeiser,Thomas Landon,C. Suckling,J. Nelson,Joe Delaney,J. Hitt,Larry Witkowski,Gary Burgin,Rached Hajji,Oleh Krutko +9 more
TL;DR: A two-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using high-voltage HBT (HVHBT) GaAs technology biased at 28 V on the collector.
Proceedings ArticleDOI
A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations
Hiroaki Deguchi,Norihiko Ui,Kaname Ebihara,Kazutaka Inoue,Norihiro Yoshimura,Hidenori Takahashi +5 more
TL;DR: In this article, a small-footprint Doherty power amplifier for 2.6GHz band basestations was designed with plain small signal analysis, and the method was very practical.
References
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RF Power Amplifiers for Wireless Communications
TL;DR: In this paper, the authors present a power amplifier design for GHz frequency bands at GHz GHz frequency band with overdrive and overdrive-only overdrive modes, as well as a switch-mode Amplifier for RF applications.
Proceedings ArticleDOI
RF power amplifiers for wireless communications
TL;DR: In this paper, the performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared, and a wide variety of semiconductor devices are used in wireless power amplifier.
Proceedings ArticleDOI
A High Power Asymmetric Doherty Amplifier with Improved Linear Dynamic Range
TL;DR: In this paper, an asymmetric high power extended Doherty amplifier, which has the extended peak efficiency over a 9-dB of output power and a linear dynamic range is presented.
Proceedings ArticleDOI
High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application
TL;DR: In this paper, the authors presented high drain efficiency of 34% and wideband characteristics of single-ended 200W GaN HEMT power amplifier for 21 GHz W-CDMA application.