Proceedings ArticleDOI
A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Rainer Weber,Dirk Schwantuschke,Peter Brückner,Rudiger Quay,Friedbert van Raay,Oliver Ambacher +5 more
- pp 1-4
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TLDR
In this paper, the authors reported state-of-the-art high frequency performance of a W-band voltage-controlled oscillator (VCO) MMIC realized in a 0.1 μm AlGaN/GaN HEMT technology.Abstract:
In this paper, we report state-of-the-art high frequency performance of a W-band voltage-controlled oscillator (VCO) MMIC realized in a 0.1 μm AlGaN/GaN HEMT technology. The oscillation frequency of the VCO can be tuned between 85.6 and 92.7 GHz, which is a relative tuning bandwidth of 8%. The achieved maximum output power is as high as 10.6 dBm. The phase noise of the VCO varies from -80.2 to -90.2 dBc/Hz at 1 MHz offset from the carrier over the tuning voltage range.read more
Citations
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Journal ArticleDOI
GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
TL;DR: The structure and properties ofGaN power devices are discussed to explain the choice of lateral integration in the view of GaN power ICs and novel integration schemes and methods are introduced to stimulate new thoughts on GaNPower integration road.
Journal ArticleDOI
An X-Band GaN HEMT Oscillator with Four-Path Inductors
Wen-Cheng Lai,Sheng-Lyang Jang +1 more
TL;DR: In this article, an X-band GaN HEMT oscillator implemented with the WIN 0.25 μm technology is proposed, which consists of a HEMt amplifier with an LC feedback network with four-path inductors.
Journal ArticleDOI
Prospects and Limitations of Stacked-FET Approaches for Enhanced Output Power in Voltage-Controlled Oscillators
TL;DR: In this paper, a W-band stacked-FET voltage-controlled oscillator MMIC with an output power of 15 dBm and a drain efficiency of 23.3% was developed.
Journal ArticleDOI
Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN x Passivations for Microwave GaN HEMTs
TL;DR: In this article, three types of SiN x passivation for microwave AlGaN/GaN HEMTs were evaluated and compared, and it was concluded that the bilayer SiNx passivation is a suitable and versatile candidate for microwave GaN devices.
Proceedings ArticleDOI
An 82.2-to-89.3 GHz CMOS VCO with DC-to-RF Efficiency of 14.8%
Amirahmad Tarkeshdouz,M. Haghi Kashani,E. Hadizadeh Hafshejani,Shahriar Mirabbasi,Ehsan Afshari +4 more
TL;DR: In this article, a 90 GHz CMOS voltage-controlled oscillator with a swing independent bias condition for the transistors at the frequency of interest is presented. But the trade-offs among efficiency and tuning range are also considered and the VCO achieves a peak DC-to-RF efficiency of 14.8% at 89.3 GHz and a wide tuning range of more than 8.3% while consuming only 8.5 mW of dc power from a 1.2-V supply.
References
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Proceedings ArticleDOI
E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers
Yasuhiro Nakasha,Satoshi Masuda,Kozo Makiyama,Toshihiro Ohki,Masahito Kanamura,Naoya Okamoto,Tatsuhiko Tajima,Takehiro Seino,Hisao Shigematsu,Kenji Imanishi,Toshihide Kikkawa,Kazukiyo Joshin,Naoki Hara +12 more
TL;DR: In this paper, two oscillators and a high power amplifier were designed with a grounded coplanar waveguide and 0.12-μm GaN HEMT technology for millimeter-wave transceivers.
Journal ArticleDOI
Fully integrated 94-GHz subharmonic injection-locked PLL circuit
TL;DR: In this article, a subharmonic injection-locked phase-locked loop (ILPLL) was proposed to improve the locking range of the MMIC by combining conventional injection-locking with an additional phase control loop.
Journal ArticleDOI
Development of a high transconductance GaN MMIC technology for millimeter wave applications
TL;DR: In this paper, the influence of barrier thickness on the maximum transconductance (gm,max) was investigated by using two different technologies: growth of thin barrier layers and deep gate recess.
Journal ArticleDOI
A V-Band Monolithic AlGaN/GaN VCO
Xing Lan,Mike Wojtowicz,M. Truong,Flavia S. Fong,Mark Kintis,Benjamin Heying,Ioulia Smorchkova,YaoChung Chen +7 more
TL;DR: In this article, a V-band push-push GaN integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz.
Proceedings ArticleDOI
A PLL-Stabilized W-Band MHEMT Push-Push VCO with Integrated Frequency Divider Circuit
TL;DR: In this paper, a PLL-based stabilization technique for monolithic integrated W-band voltage controlled oscillators (VCOs) is presented, which achieves a tuning range of 3.4 GHz around the center frequency of 92 GHz and an output power of more than 5.5 dBm.