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Journal ArticleDOI

A charge-flow transistor oscillator circuit

S.D. Senturia, +1 more
- 01 Aug 1979 - 
- Vol. 14, Iss: 4, pp 753-757
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TLDR
The charge-flow transistor (CFT) turn-on delay time can be monitored with a two-inverter one-latch oscillator and an instability of oscillator period is observed in certain bias conditions.
Abstract
The charge-flow transistor (CFT) turn-on delay time can be monitored with a two-inverter one-latch oscillator. Data are presented for a CFT oscillator incorporating the moisture-sensitive polymer film, poly (p-aminophenylacetylene). An instability of oscillator period is observed in certain bias conditions. The origin of this instability is shown to be charge-averaging the polymer film. The averaging time, which can be extracted from the transient behavior of the oscillator period after power-up, is identified as the bulk dielectric relaxation time of the polymer, and equals 130 s in the present case. A theory of oscillator operation that accounts for the observed behavior is presented, along with a brief illustration of the use of such devices in sensing applications.

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Citations
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Journal ArticleDOI

Solid-state humidity sensors

TL;DR: In this article, the applicability of semiconductor technology to the realization of general-purpose humidity sensors is discussed and examples of solid-state dew-point sensors are given.
Journal ArticleDOI

Integrated circuit microsensor for selectively detecting nitrogen dioxide and diisopropyl methylphosphonate

TL;DR: In this paper, a gas-sensitive interdiginatated gate electrode field effect transistor (IGEFET) was realized by selectively decositing a chemically-active, electron-beam evaporated copper phthalocyanine (CuPc) thin film onto an integrated circuit (IC).
Journal ArticleDOI

Selective detection of nitrogen dioxide and diisopropyl methylphosphonate with an interdigitated gate electrode field-effect transistor (IGEFET)

TL;DR: In this paper, a microelectronic integrated circuit, referred to as the interdigitated gate electrode field effect transistor (IGEFET), was coupled with a chemically active electron-beam evaporated copper phthalocyanine (CuPc) thin film to realize a novel gas-sensitive microsensor.
References
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Journal ArticleDOI

The charge‐flow transistor: A new MOS device

TL;DR: In this paper, a charge flow transistor (CFT) was developed to achieve integrated MOS compatibility in sensor applications, such as gas, humidity, and fire detection, where one is interested in monitoring the transverse resistance of a thin film.
Dissertation

Charge-flow structures as polymeric early-warning fire-alarm devices.

TL;DR: In this article, the authors investigated the utility of various thin film polymers as possible sensing materials for fire detection and gas sensing and found that one polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detecting.
Proceedings Article

The charge-flow transistor