Journal ArticleDOI
A GaAs acoustic sensor with frequency output based on resonant tunneling diodes
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TLDR
In this paper, a novel acoustic sensor with a frequency output based on AlAs/InxGa1−xAs/GaAs resonant tunneling diode (RTD) is reported.Abstract:
This paper reports a novel acoustic sensor with a frequency output based on AlAs/InxGa1−xAs/GaAs resonant tunneling diode (RTD). The RTD is incorporated in a 1m thick membrane and the fabrication technology of the membrane is based upon the selective etch of GaAs with AlAs as an etch stop layer. A relaxation oscillator is obtained with the RTD biased in the negative differential resistance (NDR) region. Acoustic pressure applied to the RTD changes the frequency of oscillation due to the shift in current–voltage characteristics. The main feature of this sensor type is the direct frequency output, which is linearly dependent on pressure, and the linear sensitivity can be up to 21 kHz/kPa. © 2006 Elsevier B.V. All rights reserved.read more
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New research on MEMS acoustic vector sensors used in pipeline ground markers.
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Efficient Solution of the Wigner–Poisson Equations for Modeling Resonant Tunneling Diodes
A S Costolanski,Carl Tim Kelley +1 more
TL;DR: In this article, a more efficient and accurate discretization of the Wigner-Poisson model for double barrier resonant tunneling diodes is presented using nonuniform grids and higher order numerical methods to improve the accuracy of the solutions at a significantly lower computational cost.
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An FPGA Implementation of Frequency Output
M. Zamora,H. Wu,Manus Henry +2 more
TL;DR: This paper provides the following elaborations of the ISIE'07 conference paper: A thorough literature review suggests that previous techniques can be classified into three basic approaches, which are derived and compared with the new approach developed by the authors.
References
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Journal ArticleDOI
Handbook of Mathematical Functions
Book
Theory of plates and shells
TL;DR: In this article, the authors describe the bending of long RECTANGULAR PLATES to a cycloidal surface, and the resulting deformation of shels without bending the plates.
Journal ArticleDOI
Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
TL;DR: In this paper, the InAs/AlSb double-barrier resonant-tunneling diodes at room temperature were used to achieve a power density of 90 W cm−2 at 360 GHz.
Journal ArticleDOI
Micro-Raman measurement of bending stresses in micromachined silicon flexures
TL;DR: In this article, the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of /spl sim/10 MPa and spatial resolution of 1 /spl mu/m was reported.