Proceedings ArticleDOI
A linear response 200-dB dynamic range CMOS image sensor with multiple voltage and current readout operations
TLDR
Operation methods for high frame rate, linear response, wide dynamicrange (DR), wide dynamic range (DR) and high SNR in a CMOS image sensor are discussed.Abstract:
Operation methods for high frame rate, linear response, wide dynamic range (DR) and high SNR in a CMOS image sensor are discussed. The high frame rate operation is realized by the optimum design of the floating diffusion capacitor, the lateral overflow integration capacitor, the column integration capacitor and the integration periods of multiple voltage and current readout operations. The color CMOS image sensor which consists of the 1/3-inch, 800H × 600V pixels and 5.6-μm pixel pitch with a buried pinned-photodiode, a transfer switch, a reset switch, a lateral overflow switch, a lateral overflow integration capacitor, a photocurrent readout switch, a source follower transistor and a pixel select switch in each pixel has been fabricated by 0.18-μm 2P3M CMOS technology. The image sensor operates the total frame rate of 13-fps with three-time voltage readout operations and one current readout operation and have realized full linear photoelectric conversion responses, over 20-dB SNR for the image of the 18-% gray card at all integration operation switching points and the over 200-dB DR.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.read more
Citations
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Journal ArticleDOI
A Wide DR and Linear Response CMOS Image Sensor With Three Photocurrent Integrations in Photodiodes, Lateral Overflow Capacitors, and Column Capacitors
TL;DR: A 1/3-inch, 800H x 600v pixels, 5.6 mum2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 mum 2P3M CMOS technology has been reported.
Journal ArticleDOI
Real-time measurement method of melt pool temperature in the directed energy deposition process
TL;DR: In this paper, a high-speed measuring optical path for a temperature field using a single camera is designed based on dual-wavelength thermometry, and an on-line temperature measurement system is developed, and its validation experiment indicates a measuring error of less than 1%.
Proceedings ArticleDOI
A self-adjusting Lin-Log active pixel for wide dynamic range CMOS image sensor
TL;DR: A self-adjusting pixel to combine linear and logarithmic response maintaining high fill factor is proposed for dynamic range imager and simulated in Cadence Virtuoso in 180nm technology node and analyzed for comparative study of dynamic range.
Proceedings ArticleDOI
Method for evaluating tone mapping operators for natural high dynamic range images
TL;DR: A no-reference method based on ISO 20462-2:2005 triplet comparison was created for evaluating tone mapping operators and the results indicate that the method successfully ranked the method in terms of naturalness and pleasantness.
Proceedings ArticleDOI
A Wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors
TL;DR: A 1/3-inch, 800H x 600v pixels, 5.6 mum2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 mum 2P3M CMOS technology has been reported.
References
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Proceedings ArticleDOI
A 19.5b dynamic range CMOS image sensor with 12b column-parallel cyclic A/D converters
TL;DR: In this paper, a CMOS image sensor with 117 dB DR was demonstrated in a 025 /spl mu/m CMOS technology through merging of multiple exposures and a 12b cyclic ADC with integrated noise canceling was implemented in the column of the image sensor and achieved a DNL of +04/-08 LSB.
Journal ArticleDOI
A Wide DR and Linear Response CMOS Image Sensor With Three Photocurrent Integrations in Photodiodes, Lateral Overflow Capacitors, and Column Capacitors
TL;DR: A 1/3-inch, 800H x 600v pixels, 5.6 mum2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 mum 2P3M CMOS technology has been reported.
Proceedings ArticleDOI
A Wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors
TL;DR: A 1/3-inch, 800H x 600v pixels, 5.6 mum2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 mum 2P3M CMOS technology has been reported.