Journal ArticleDOI
Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit
TLDR
In this article, a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit is proposed, which senses the moment of event from the pixel instead of reading the voltage signal.Abstract:
This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ?m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.read more
Citations
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Journal ArticleDOI
An Ultra-Low Power Energy Harvesting and Imaging (EHI) Type CMOS APS Imager With Self-Power Capability
Ismail Cevik,Suat U. Ay +1 more
TL;DR: The proposed EHI type CMOS APS pixel harvests one order of magnitude higher power than that of the other pixel technologies reported in the literature and has decoupled imaging and harvesting operations such that imaging related circuits are turned off while energy is harvested, and vice versa.
Journal ArticleDOI
An 84 pW/Frame Per Pixel Current-Mode CMOS Image Sensor With Energy Harvesting Capability
Fang Tang,Amine Bermak +1 more
TL;DR: In this paper, the authors presented an ultra-low-power current-mode image sensor with energy harvesting capability, by biasing the in-pixel transconductance amplifier in triode region and using a pipelined 9-bit ADC.
Journal ArticleDOI
A 137 dB Dynamic Range and 0.32 V Self-Powered CMOS Imager With Energy Harvesting Pixels
TL;DR: This work presents an 0.32 V self-powered high dynamic range CMOS imager in standard 0.18 μm CMOS technology with dual-mode operation: imaging (IMG) and optical energy harvesting (OEH) modes.
Journal ArticleDOI
A 0.5 V PWM CMOS Imager With 82 dB Dynamic Range and 0.055% Fixed-Pattern-Noise
TL;DR: The proposed TVC scheme efficiently improves the fixed-pattern-noise (FPN) issue caused by process variation in conventional PWM sensors and can be extended by 56.5 dB with the proposed PCCT operation.
Journal ArticleDOI
A 0.8-V 4096-Pixel CMOS Sense-and-Stimulus Imager for Retinal Prosthesis
Chih-Lin Lee,Chih-Cheng Hsieh +1 more
TL;DR: In this article, an integrated sense-and-stimulus (SAS) function for retinal prosthesis has been implemented for various purposes, such as test mode, programming (PG) mode, and implanted (IP) mode.
References
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TL;DR: A 1/1.8-inch 6.4 MPixel 60 frames/s CMOS image sensor fabricated in a 0.18-mum single-poly triple-metal (1P3M) process is described, which has 38% fill factor and 12ke-/lux sensibility.
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Extended Dynamic Range From a Combined Linear-Logarithmic CMOS Image Sensor
TL;DR: A CMOS image sensor that can operate in both linear and logarithmic mode is described, and a novel on-chip method of deriving a reference point has been implemented that addresses the problems of high fixed pattern noise, slow response time, and low signal-to-noise ratio (SNR) in logarithsmic mode.
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A CMOS Imager With Column-Level ADC Using Dynamic Column Fixed-Pattern Noise Reduction
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