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α,ω-Dihexylquaterthiophene: A Second Thin Film Single-Crystal Organic Semiconductor

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TLDR
In this paper, the thin film structure and hole mobility of dihexyl quaterthiophene are reported, and the mobility ranges from 0.05 to 0.23 cm2/Vs, depending on the deposition temperature.
Abstract
The thin film structure and hole mobility of 5,5‘‘‘-dihexylquaterthiophene are reported. Films sublimed onto Si/SiO2 or carbon grids held at 30−100 °C are single-crystal-like over tens of micrometers as shown by electron diffraction. The orientation has the long axis of the quaterthiophene core nearly perpendicular to the substrate. The mobility ranges from 0.05 to 0.23 cm2/Vs, depending on the deposition temperature, much higher than would be expected based on earlier thiophene oligomer data.

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Citations
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Journal ArticleDOI

Organic Thin Film Transistors for Large Area Electronics

TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI

Functional oligothiophenes: molecular design for multidimensional nanoarchitectures and their applications.

TL;DR: Dithieno[3,2-b:2′3′-d]thiophene-4,4-dioxides 1221 3.3.1.
Journal ArticleDOI

Organic thin-film transistors: a review of recent advances

TL;DR: This paper review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
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Synthetic chemistry for ultrapure, processable, and high-mobility organic transistor semiconductors.

TL;DR: This Account reviews the synthetic methods that have been most useful for preparing a range of semiconductors, including thiophene-based oligomers, several kinds of fused rings, and polymers, and the tradeoff between process efficiency and target purity is emphasized.
References
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Journal ArticleDOI

Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility

TL;DR: In this paper, the electrical characteristics of field effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed and the authors demonstrate that both high field effect mobilities (ca. 0.045 cm2/V) and relatively high on/off current ratios (greater than 103) can be achieved.
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Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices

TL;DR: In this paper, the authors derived the stability requirements on electrode potentials of n-type doped conducting polymers and compared the predictions with experimental data on stability of polymers, and showed that an electrode potential of about 0 to + 0.5 V (SCE) is required for stable polymers.
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Macromolecular electronic device: Field-effect transistor with a polythiophene thin film

TL;DR: In this paper, the first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor.
Journal ArticleDOI

Organic field‐effect transistors with high mobility based on copper phthalocyanine

TL;DR: In this paper, an organic field effect transistors that employ copper phthalocyanine (Cu-Pc) as the semiconducting layer can function as p-channel accumulation mode devices.
Journal ArticleDOI

Molecular beam deposited thin films of pentacene for organic field effect transistor applications

TL;DR: In this article, a maximum field effect mobility of 0.038 cm−2'V−1'1's−1 is reported for devices incorporating pentacene films deposited at room temperature.
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