Journal ArticleDOI
A Study of Immersion Processes of Activating Polished Crystalline Silicon for Autocatalytic Electroless Deposition of Palladium and Other Metals
Shreepad Karmalkar,J. Banerjee +1 more
TLDR
In this paper, the authors study the effect of modifying the Pd-ammine complex and varying the substrate doping on Pd deposition during activation and Pd AED adhesion and find that the AED of Pd on polished crystalline Si is non-adherent using this activator solution.Abstract:
The solution in which Si is immersed for activation prior to autocatalytic electroless deposition (AED) of Ni, Cu, etc. is usually HF-PdCl 2 -HCl. However, we find that the AED of Pd on polished crystalline Si, which has important applications in modern planar integrated circuit technology, is nonadherent using this activator solution. Our study of the effects of modifying this solution and varying the substrate doping on the Pd deposition during activation and Pd AED adhesion reveals the following. The activation quality and hence AED adhesion depends not on the SiO 2 etch rate of the solution but on the composition of the solution Pd complex and the substrate hole concentration. In spite of the highest Pd deposition rate during immersion, the activation quality of n-Si with doping >10 19 /cm 3 is poor unless a hole-generating stimulus (e.g., illumination) is present. A change in substrate hole concentration influences AED adhesion by altering the substrate potential and/or density of nucleation sites during activation. Similarly, a change in the Pd complex affects AED adhesion by altering the solution Pd potential. Introduction of certain ammonium compounds into the HF-PdCl 2 -HCl bath creates a specific Pd-ammine complex, most probably Pd(NH 3 ) 2 Cl 2 , which gives Pd AED adhesions of ∼9 and 4 (3) × 10 6 N/m 2 on heavily doped p-Si and lightly doped p(n)-Si, respectively, using a low SiO 2 etch rate (∼90 A/min) and a low temperature (200°C) for Pd nuclei silicidation during activation. Our results regarding the activation mechanism are believed to apply generally to all AED on Si.read more
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Journal ArticleDOI
Surface-enhanced IR absorption on platinum nanoparticles: an application to real-time monitoring of electrocatalytic reactions
TL;DR: Molecules adsorbed on Pt nanoparticles prepared on Si by a chemical deposition technique exhibit extremely strong IR absorption, which enables fast time-resolved IR monitoring of electrocatalytic reactions.
Journal ArticleDOI
Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes
TL;DR: In this paper, a brief review of the fundamental aspects underlying galvanic displacement processes on semiconductor surfaces is presented, including applications to micro and nanoscale devices, including schemes developed for the metallization and nanopatterning of semiconductor substrates with high selectivity and with optimal interfacial properties.
Journal ArticleDOI
Electromagnetic interference shielding effectiveness of electroless Cu-plated PET fabrics
TL;DR: In order to develop the high quality electromagnetic interference (EMI) shielding textiles for protective clothing, polyester fabrics were electroless copper-plated as discussed by the authors, and the effects of pretreatment conditions such as scouring, etching, and catalyzation on electromagnetic interference shielding effectiveness (EMISE) and physical properties of treated fabrics were investigated.
Journal ArticleDOI
Adsorbed formate: the key intermediate in the oxidation of formic acid on platinum electrodes
TL;DR: It is confirmed that the dehydration of formic acid on Pt electrodes requires adjacent empty sites, and it is demonstrated that the reaction follows an apparently paradoxical electrochemical mechanism, in which an oxidation is immediately followed by a reduction.
Journal ArticleDOI
Immersion Deposition of Metal Films on Silicon and Germanium Substrates in Supercritical Carbon Dioxide
Xiangrong Ye,Chien M. Wai,Daqing Zhang,Yanko Kranov,David N. McIlroy,Yuehe Lin,Mark H. Engelhard +6 more
TL;DR: A low temperature carbon dioxide based on immersion deposition technology (SFID) has been developed for producing palladium, copper, silver, and other metal films on silicon-based substrates in supercritical CO2 as mentioned in this paper.