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Proceedings ArticleDOI

An accurate gate delay model for high speed digital and analog circuits

Josef Dobes, +2 more
- pp 1-4
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TLDR
In this article, the second-order Bessel function is used to simulate the delay of microwave transistors and the simulation times are comparable with those obtained without the delay model, and the proposed model does not create spurious oscillations that are typical for any LC approximation.
Abstract
At present, most of simulation programs can characterize gate delays of microwave transistors. However, the delay is mostly approximated by means of a first-order differential equation only. In the paper, a more accurate way is suggested which is based on an appropriate second-order Bessel function. The delay model is implemented to a slightly but efficiently modified classic MESFET model. The proposed model does not create spurious oscillations that are typical for any LC approximations, and the simulation times are comparable with those obtained without the delay model. Properties of the implementation of the second-order Bessel function are demonstrated by an analysis of a tunable distributed microwave oscillator.

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Citations
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Proceedings ArticleDOI

A modified Branin model of lossless transmission lines

TL;DR: A mathematical substitution of the delay is suggested which smoothly cooperates with the circuit algorithms and results of the simulation do not contain spurious oscillations that are practically irremovable when an LC model of the line is used.
References
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Journal ArticleDOI

GaAs FET device and circuit simulation in SPICE

TL;DR: In this article, a GaAs FET model suitable for SPICE circuit simulations is developed, where the dc equations are accurate to about 1 percent of the maximum drain current, and a simple interpolation formula for drain current as a function of gate-to-source voltage connects the square-law behavior just above pinchoff and the square root law for larger values of the drain current.
Journal ArticleDOI

GaAs MESFET modeling and nonlinear CAD

TL;DR: In this paper, the use of large-signal model in an interactive program for amplifier analysis is shown and the computed load-pull results and IMD (intermodulation distortion) predictions are shown to be in good agreement with measured data at 10 GHz.
Journal ArticleDOI

A realistic large-signal MESFET model for SPICE

TL;DR: In this paper, a comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented, it describes subthreshold conduction and breakdown.
Journal ArticleDOI

The distributed oscillator at 4 GHz

TL;DR: In this article, the design and experimental verification of a tunable oscillator based on a microwave distributed amplifier is described, which is capable of continuous tuning over the range 1-3.5 GHz with good spectral purity.
Journal ArticleDOI

A comprehensive four parameters I–V model for GaAs MESFET output characteristics

TL;DR: In this article, a comparison of nine different nonlinear I-V models for the simulation of submicron GaAs MESFET dc characteristics has been made and root-mean-square (RMS) errors were calculated.