Journal ArticleDOI
An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
Tomoyuki Akeyoshi,Naofumi Shimizu,Jiro Osaka,Masafumi Yamamoto,Tadao Ishibashi,Kimikazu Sano,Koichi Murata,Eiichi Sano +7 more
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TLDR
In this paper, an optoelectronic logic gate using two resonant tunneling diodes and one uni-traveling-carrier photodiode (UTC-PD) was fabricated.Abstract:
InP-based InGaAs/AlAs/InAs resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD) are monolithically integrated to construct an optoelectronic logic gate. RTD structures are regrown by molecular beam epitaxy on the top of UTC-PD structures grown by metalorganic chemical vapor deposition. The characteristics of the regrown RTDs are almost the same as those of conventional RTDs directly grown on semi-insulating InP substrates. The UTC-PD provides a sufficient current drivability along with a high-speed operation demonstrated by the 3-dB bandwidth of 80 GHz, even at the low bias voltage corresponding to the peak voltage of the RTD. An optoelectronic logic gate using two RTDs and one UTC-PD was fabricated. This simple optoelectronic logic gate exhibited high-speed delayed flip-flop operation of 40 Gbit/s at a small power consumption of 7.75 mW. These results suggest that an optoelectronic logic gate using RTDs and a UTC-PD is suitable for the construction of ultrahigh-speed and low-power optoelectronic circuits.read more
Citations
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Journal ArticleDOI
High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes
TL;DR: The unitraveling-carrier photodiode (UTC-PD) as mentioned in this paper utilizes only electrons as the active carriers, which is the key for its ability to achieve excellent high-speed and high-output characteristics simultaneously.
Journal Article
InP/InGaAs Uni-Traveling-Carrier Photodiodes
Tadao Ishibashi,Tomofumi Furuta,Hiroshi Fushimi,S. Kodama,Hiroshi Ito,Tadao Nagatsuma,Naofumi Shimizu,Yutaka Miyamoto +7 more
TL;DR: In this article, the operation, design, and performance of the uni-traveling-carrier photodiode (UTC-PD) is reviewed. But the authors do not consider the use of InP/InGaAs as an optoelectronic driver.
Journal ArticleDOI
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode
TL;DR: This paper describes an 80-Gb/s optoelectronic delayed flip-flop IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD) and analyzes the factors limiting circuit speed to clarify the maximum operation speed.
Journal ArticleDOI
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Hiroki Sugiyama,Hideaki Matsuzaki,Yasuhiro Oda,Haruki Yokoyama,Takatomo Enoki,Takashi Kobayashi +5 more
TL;DR: In this paper, an InP-based resonant tunneling diodes with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organic vapor phase epitaxy (MOVPE).
Journal ArticleDOI
80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
TL;DR: An 80 Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and a uni-travelling-carrier photodiode is reported in this article.
References
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Journal ArticleDOI
High-Speed Response of Uni-Traveling-Carrier Photodiodes
TL;DR: In this article, the photoresponse of a uni-traveling-carrier photodiode (UTC-PD), which is configured with a neutral narrow-gap light absorption layer and a depleted wide-gap carrier collecting layer, is investigated by small-signal analysis.
Journal ArticleDOI
In0.53Ga0.47As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
TL;DR: In this article, the authors reported the fastest switching time of 1.5 ps for In0.53Ga0.47As/AlAs resonant tunnelling diodes with 1.1 nm wide barriers and a peak current density of 6.8 × 105 A/cm2.
Journal ArticleDOI
Electro-optic characterisation of ultrafast photodetectors using adiabatically compressed soliton pulses
Tadao Nagatsuma,Makoto Yaita,Mitsuru Shinagawa,Kuniharu Kato,A. Kozen,Katsumi Iwatsuki,Kazunori Suzuki +6 more
TL;DR: In this article, the response of ultrafast photodetectors at 1.55 mu m wavelength has been measured by electro-optic sampling using adiabatically compressed soliton pulses.
Journal ArticleDOI
Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
TL;DR: In this article, the authors studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 ×1017 cm-3.5 cm and found that 3dB band width increases with the output voltage in low output region.
Journal ArticleDOI
Ultra-fast optoelectronic circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode
Kimikazu Sano,K. Murata,Tomoyuki Akeyoshi,Naofumi Shimizu,Taiichi Otsuji,M. Yamamoto,Tadao Ishibashi,Eiichi Sano +7 more
TL;DR: In this paper, an ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD), is proposed.