Journal ArticleDOI
Annealing behavior of evaporated gold films: Resistivity, thermoelectric power and hall coefficient
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TLDR
In this article, the effect of annealing on the electronic structure of unannealed and annealed gold films was investigated and the following results were obtained: the specularity parameter was increased by the annaling and was dependent on the temperature.About:
This article is published in Thin Solid Films.The article was published on 1974-03-01. It has received 34 citations till now. The article focuses on the topics: Seebeck coefficient & Hall effect.read more
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Electron transport properties of thin copper films. I.
TL;DR: In this paper, a critical analysis of the observed size effects in all cases depart markedly from the predictions of the Fuchs-Sondheimer theory (and also that of the Mayadas-Shatzkes theory which takes into account the grain boundary surface scattering).
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Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H-terminated Si(100)
TL;DR: In this article, the crystal structure, surface morphology, and electrical conductance of Cu films grown on H−terminated Si(100) were investigated, and the films were grown by thermal evaporation at 10−8 Torr, at deposition rates from 0.1 to 3.5 nm/s and at substrate temperatures from room temperature up to 200 °C.
Journal ArticleDOI
Role of structural defects in electron transport properties of copper films
TL;DR: In this article, the activation energy for the associated recovery process has been obtained from the observed isothermal and isochronal changes in the resistance of the films, which increases from a value of 0.7 eV at 2000 A to 1.4 EV at 180 A for room-temperature-deposited Cu films.
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Electron density changes and the surface resistivity of thin metal films : oxygen on Cu(100)
TL;DR: In this paper, a study of dc resistance and infrared reflectance changes induced in epitaxial Cu(1/0/0) films by adsorbed oxygen was conducted, and it was shown that standard surface resistivity models based on free electrons and point scatterers are inadequate.
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A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering
TL;DR: In this paper, a comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented.
References
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Journal ArticleDOI
Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces
A. F. Mayadas,M. Shatzkes +1 more
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
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The ordinary transport properties of the noble metals
TL;DR: In this article, the shape of the Fermi surface is made to depend on a single parameter which can be interpreted as the pseudo-potential of the {111} atomic planes acting on an orthogonalized plane wave, giving rise to an energy gap of 5-10 ev at the zone boundaries.
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Mathiessen's Rule and Anisotropic Relaxation Times
J. S. Dugdale,Z. S. Basinski +1 more
TL;DR: In this paper, the authors measured deviations from the Matthiessen rule for dilute alloys of copper with gold, tin, or germanium, and of silver with gold or tin; and for strained copper and silver.