Journal ArticleDOI
Arsenic‐ and metal‐induced GaAs interface states by low‐energy cathodoluminescence spectroscopy
R. E. Viturro,J. L. Shaw,Leonard J. Brillson,Jerry M. Woodall,Peter D. Kirchner,George David Pettit,Steven L. Wright +6 more
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In this paper, the authors used optical emission techniques to obtain a direct measure of discrete electronic states at GaAs interfaces and provided the first direct experimental evidence for the origin of Fermi level pinning at metal/melt-grown GaAs junctions.Abstract:
We used optical emission techniques to obtain a direct measure of discrete electronic states at GaAs interfaces. These states depend on surface preparation, metallization, and semiconductor material. The energy of the discrete states found at metal/molecular‐beam epitaxially grown GaAs(100) interfaces integrated within a Schottky formalism provides self‐consistent results for the interface electrostatics. The presence of a large concentration of extrinsic defects causes the pinning behavior observed at metal/melt‐grown GaAs(110) interfaces. These results provide the first direct experimental evidence for the origin of Fermi level ‘‘pinning’’ at metal/melt‐grown GaAs junctions.read more
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Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures
TL;DR: In this article, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe and the resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
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Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy
TL;DR: In this paper, the authors used cathodoluminescence (CL) and photolumininescence spectroscopy to observe deep-level states in GaAs grown at low-substrate temperatures by molecular beam epitaxy (LT GaAs) and the evolution of these states upon annealing.
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Metamorphic GaAs/GaAsBi Heterostructured Nanowires
Fumitaro Ishikawa,Yoshihiko Akamatsu,Kentaro Watanabe,Fumihiko Uesugi,Shunsuke Asahina,Uwe Jahn,Satoshi Shimomura +6 more
TL;DR: The existence of localized states energetically and spatially dispersed throughout the NW are indicated from the low temperature cathodoluminescent spectra and images, resulting in the observed luminescence spectra characterized by large line widths at low temperatures as well as by the appearance of multiple peaks at high temperatures and for high excitation powers.
Journal ArticleDOI
Chemical physics of fluorine plasma‐etched silicon surfaces: Study of surface contaminations
TL;DR: In this article, surface analysis using x-ray photoelectron spectroscopy and nuclear reaction analysis has been conducted to understand basic mechanisms of surface modifications. But their experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor.
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Electron-Transfer Dynamics at GaAs Surface Quantum Wells
TL;DR: In this paper, the surface quantum well structure was used specifically to remove field-dependent transport effects from the photocarrier dynamics and a fit to the data gives an electron-transfer cross section of (2.4 ± 0.8) × 10-15 cm2, which corresponds to charge transfer in the adiabatic coupling regime.