Journal ArticleDOI
AuGeNi ohmic contacts to n-InP for FET applications
TLDR
AuGeNi/InP contacts with excellent surface morphology and edge definition were obtained for alloying temperatures between 360°C and 460°C, with contact resistance around 0.02-0.07 μ · mm.Abstract:
AuGeNi ohmic contact formation on Si-implanted InP has been investigated. Ohmic contacts suitable for application to field-effect transistors are obtained at alloying temperatures between 360°C and 630°C, with contact resistance around 0.02–0.07 μ · mm. A liquid phase appears at an alloying temperature of about 460°C. in consequence, contacts with excellent surface morphology and edge definition are obtained for alloying temperatures between 360°C and 460°C. Four different regimes in the alloying temperature behavior of the AuGeNi/InP system are observed and their physical origin is discussed. A close to quadratic correlation exists between the achieved contact resistance and the underlying semiconductor sheet resistance.read more
Citations
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Journal ArticleDOI
Annealed AuGe based ohmic contacts on InP with ion milling prior to metallization
J. Dunn,Gerald B. Stringfellow +1 more
TL;DR: In this paper, the authors investigated the relationship between the deposition conditions leading to HO incorporation, and other post-deposition pathway(s) by which OH can also be incorporated, and they found two distinct postdeposition sources, one from the deposition chamber ambient during cool-down and one from atmospheric moisture.
Journal ArticleDOI
Au/Ge/Ni ohmic contacts to n-type InP
TL;DR: In this paper, the relationship between the electrical properties and microstructure for annealed Au/Ge/Ni contacts to n-type InP, with an initial doping level of 1017 cm-3, have been studied.
Journal ArticleDOI
Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide.
TL;DR: Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved.
Journal ArticleDOI
Transport properties of low-resistance ohmic contacts to InP
TL;DR: In this article, the transport properties of conventional Au-based low-resistance ohmic contacts to n- and p-type InP have been investigated, and drift and diffusion across a thermodynamically stable metalphosphide-InP junction is found to be the rate-limiting step of the lowresistance contacts to N-Type InP.
Journal ArticleDOI
The formation of low resistance electrical contacts to shallow junction InP devices without compromising Emitter integrity
Navid S. Fatemi,Victor G. Weizer +1 more
TL;DR: In this paper, the authors investigated the possibility of providing low resistance contacts to shallow junction InP devices which do not require sintering and which does not cause device degradation even when subjected to extended annealing at elevated temperatures.
References
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Journal ArticleDOI
Obtaining the specific contact resistance from transmission line model measurements
G.K. Reeves,H.B. Harrison +1 more
TL;DR: In this article, it was shown that the contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
Journal ArticleDOI
Low resistance ohmic contacts to n- and p-InP
TL;DR: In this article, the contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied and the specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance.