Journal ArticleDOI
Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in au/n-si schottky contacts by a hf pretreatment
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In this article, the distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy, where negatively charged species containing F at the interface were thought to be responsible for the high barrier Gaussian components.Abstract:
The distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy. For samples on which an aqueous HF pretreatment of the Si substrate was applied, the histogram contains several high barrier Gaussian distribution components. After a short rinse, in de-ionized water or methanol, it was mainly the most important lower Gaussian component which was left. Using additional x-ray photoemission spectroscopy and atomic force microscopy measurements allowed us to propose a model, wherein negatively charged species containing F at the interface, are thought to be responsible for the high barrier Gaussian components.read more
Citations
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Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts
TL;DR: In this paper, it was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH Φb0, increase of the ideality factor n and non-linearity in the activation energy plot at low temperatures.
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Semiconductor Junction Gas Sensors
TL;DR: 3.5.3 as discussed by the authors 3.3.4.1.1-3.3-5.5-4.2-1.4-1/3.
Journal ArticleDOI
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
Shiyang Zhu,R. L. Van Meirhaeghe,Christophe Detavernier,Felix Cardon,Guo-Ping Ru,Xin-Ping Qu,Bing-Zong Li +6 more
TL;DR: In this article, the forward currentvoltage characteristics of epitaxial CoSi 2 contacts grown by Ti-interlayer mediated epitaxy (TIME) scheme on n-type Si substrates of both (100) and (111) orientations are studied in the temperature range from 80 to 300 k.
Journal ArticleDOI
Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods
TL;DR: In this article, an electrical characterization of the Al/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/p-Si Schottky diode with the ideality factor value of 1.88 obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schotty diode due to the existence of an insulating layer on the organic semiconductor.
Journal ArticleDOI
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments
TL;DR: In this paper, the distribution of Schottky barrier heights over the contact area in Au/III-V semiconductor (GaAs, InP, AlxGa1-xA, InxGa 1-xAs) diodes was determined using ballistic electron emission microscopy.
References
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Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Electron transport at metal-semiconductor interfaces : general theory
TL;DR: Results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
Journal ArticleDOI
Schottky Barrier Heights and the Continuum of Gap States
TL;DR: In this paper, the Schottky barrier heights for metal-semiconductor interfaces with a variety of metals have been calculated, and they are in excellent agreement with experiment for interfaces with various metals.
Journal ArticleDOI
Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy
W. J. Kaiser,L. D. Bell +1 more
TL;DR: In this paper, a new technique for spectroscopic investigation of subsurface interface electronic structure has been developed, called ballistic-electron-emission microscopy (BEEM), based on scanning tunneling microscopy.