Journal ArticleDOI
Beam‐size measurements in focused ion beam systems
TLDR
In this paper, the beam diameter is determined by measuring the ratio of ion flux in a single pixel wide feature to that of a feature which is much larger than the beam size.Abstract:
Accurate measurement of the beam diameter for a finely focused ion beam is difficult using conventional methods which have been applied in electron beam systems. Generally, the beam is scanned across an abrupt edge while measuring beam current or secondary electron intensity. For ions, the sputtering of the sample degrades the shape of the edge and thus the accuracy of the measurement. Furthermore, implantation can change the secondary electron contrast during the measurement. In this paper, a new method is suggested that avoids these difficulties. The ion beam diameter is determined by measuring the ratio of ion flux in a single pixel wide feature to that of a feature which is much larger than the beam diameter. This ratio can be measured using a threshold process. For this paper, we have used sputtering of a thin film as the threshold process and secondary ion mass spectrometry as the end‐point determinant.read more
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Journal ArticleDOI
Recent developments in micromilling using focused ion beam technology
TL;DR: The application of focused ion beam (FIB) technology in microfabrication has become increasingly popular as discussed by the authors, and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it.
Journal ArticleDOI
Scanning probe tips formed by focused ion beams
TL;DR: In this paper, the probe tips for scanning tunneling microscopy have been sharpened using focused ion beam milling, using polycrystalline W and Pt-Ir shanks.
Journal ArticleDOI
Depth control of focused ion-beam milling from a numerical model of the sputter process
TL;DR: In this article, a mathematical model of focused ion-beam milling is used to generate dwell times for the vector scanned pixel address scheme of a focused ionbeam deflection system, incorporating the absolute sputter yield of the solid as a function of the angle of incidence, and the relationship between the ionbeam current distribution and the pixel size of the deflection pattern.
Journal ArticleDOI
Accurate focused ion beam sculpting of silicon using a variable pixel dwell time approach
David P. Adams,Michael J. Vasile +1 more
TL;DR: In this article, the authors demonstrate accurate focused ion beam sculpting of micron-scale curved shapes into initially planar solids by varying the dose per pixel within individual boustrophedonic scans and accounting for the material-specific angle-dependent sputter yield and the ion beam spatial distribution.
Journal ArticleDOI
Milling of submicron channels on gold layer using double charged arsenic ion beam
TL;DR: In this paper, the capability of using a focused ion beam (FIB) for milling of submicron channel structures on a gold layer is investigated, and the effect of the dwell time on the final profiles of the milled structures is assessed.