Journal ArticleDOI
Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky Barriers
G. I. Roberts,C. R. Crowell +1 more
TLDR
In this article, the capacitance-voltage relationship of a Schottky barrier diode is predicted for an energy distribution of impurity levels having spatially uniform concentration in an n-type semiconductor.Abstract:
The capacitance‐voltage (C‐V) relationship of a Schottky barrier diode is predicted for an energy distribution of impurity levels having spatially uniform concentration in an n‐type semiconductor. The model applies for forward and reverse bias voltages at modulation frequencies near dc and at modulation frequencies at which one or more of the deep doping levels cannot respond. Effects of partial ionization of impurity species and the effect of electrons in the depletion region are considered. It is predicted that the diode [d(1/C)/dV] versus V relationship exhibits sharp minima when the barrier height minus the applied bias is equal to the energy level relative to the conduction band edge of any of the predominant deep‐lying impurities in the semiconductor. The way in which deep lying impurities consequently affect a C‐V impurity profile analysis is discussed.read more
Citations
More filters
Journal ArticleDOI
Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions
TL;DR: In this article, a method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed, which consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the signal corrected by a factor taking into account the band bending and the drop of the ac signal.
Journal ArticleDOI
The structure and properties of metal-semiconductor interfaces
TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
Journal ArticleDOI
Admittance spectroscopy of impurity levels in Schottky barriers
TL;DR: In this paper, an exact (i.e., to arbitrary accuracy) solution for the complex admittance of Schottky-barrier diodes as a function of temperature provided a spectroscopy of deep trapping levels.
Journal ArticleDOI
Influence of deep traps on the measurement of free‐carrier distributions in semiconductors by junction capacitance techniques
TL;DR: In this paper, a generalized model for the electronic behavior of deep traps in a p −n junction depletion region is developed for the measurement of junction capacitance transients and photocapacitance.
Journal ArticleDOI
Doped amorphous semiconductors
TL;DR: In this article, the effect of n and p-type impurities on the electronic transport properties of substitutionally doped a-Si and a-Ge was discussed based on results from conductivity, drift mobility, Hall effect and thermoelectric power measurements and leads to the main conclusion that the donors introduce a new hopping path through the system which begins to dominate over tail state hopping when their density exceeds about 1018 cm-3.
References
More filters
Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System
TL;DR: In this paper, an expression for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate is derived.
Journal ArticleDOI
The charge and potential distributions at the zinc oxide electrode
TL;DR: Capacitance measurements made on single crystal zinc oxide electrodes in contact with aqueous electrolytes are reported in this paper, and the results are in almost quantitative accord with predictions of the simple Poisson-Boltzmann (Poisson-Fermi in the degenerate case) equation.
Journal ArticleDOI
Frequency dependence of the reverse-biased capacitance of gold-doped silicon P + N step junctions
Chih-Tang Sah,V.G.K. Reddi +1 more
TL;DR: The experimentally observed frequency dependences of the reverse-biased capacitance of gold-doped silicon step junctions over the frequency range from 10 cps to 30 Mc are found to be in agreement with a simple physical model which takes into account the charge condition and the charging and discharging time constant of the deep-gold acceptor level in the transition region of the junction.
Journal ArticleDOI
Minority carrier injection and charge storage in epitaxial Schottky barrier diodes
TL;DR: In this article, the authors considered minority carrier injection by noninjecting metal-semiconductor contacts under conditions of moderate to heavy forward bias and showed that the injection ratio, γ (ratio of minority carrier current to total current), rises linearly with forward current for sufficiently large applied bias.
Related Papers (5)
Frequency dependence of the reverse-biased capacitance of gold-doped silicon P + N step junctions
Chih-Tang Sah,V.G.K. Reddi +1 more