Journal ArticleDOI
Cathodoluminescence and X-ray analysis of defect reaction in Ag—CdS polycrystalline layers
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TLDR
Based on self-compensation theory and self-induced field effects, as well as on complex formation between impurities, a phenomenological model is proposed in this article for the diffusion of silver in the surface region of evaporated CdS polycrystalline films and single crystal.Abstract:
The diffusion of silver in the surface region of evaporated CdS polycrystalline films and single crystal has been carried out at 300°C for diffusion times between 5 min and 60 h. The diffusion profiles were studied by cathodoluminescence (CL) and X-ray analysis. The very sensitive CL modulation across the diffusion front correlates with EPMA; both techniques show anomalous oscillating profiles. Based on self-compensation theory and self-induced field effects, as well as on complex formation between impurities, a phenomenological model is proposed.read more
Citations
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Surface states simulation model for photoconductors infrared detectors
TL;DR: In this paper, a model based on surface states associated of surface defects is also developed, in which the barrier height at the semiconductor free surface is modified under photonic excitation.
Journal ArticleDOI
Cathodoluminescence dependence on electron beam diameter
TL;DR: In this paper, an interesting behavior of the cathodoluminescence (CL) intensity as a function of electron beam spot size was found, i.e., the relative CL intensity of both edge and defect emissions in all semiconducting materials studied here depends strongly upon the electron beam diameter.
References
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Journal ArticleDOI
The segregation of impurities and the self‐compensation problem in II‐VI compounds
TL;DR: In this article, the authors show that the electrical and optical properties of ZnTe or CdTe crystals are generally inhomogeneous after annealing, due to the redistribution of preexisting impurities.
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Diffusion of Cd in CdS
TL;DR: In this article, the self-diffusion of Cd in CdS has been measured under a variety of doping and firing conditions, and it was suggested that Cd and sulfur vacancies (Schottky defects) are the dominant native defects.
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Diffusion and Solubility of Ag in CdS
TL;DR: In this paper, the authors measured the solubility of Ag in CdS under conditions of excess sulfur between 375° and 900°C and showed that the rate of diffusion of Ag shows a strong concentration dependence and is extremely rapid for dilute Ag concentrations.
Journal ArticleDOI
Anomalous Impurity Diffusion in III–V Compounds: The Consequence of Self‐Induced Field Effects
TL;DR: In this article, self-consistent model calculations are presented of the diffusion of ionized impurities with two different charge states, including the self-generated electric field, and strong deviations from the complementary error function can occur without any local nonequilibrium effects: very flat, very steep, concave and compensated regions in the profile as well as "uphill" diffusion can be explained as a consequence of self-induced field effects.
Journal ArticleDOI
Étude de la diffusion de l'argent dans les cristaux de Cds par la méthode capacitive
J.-P. Sorbier,N. Sanguinetti +1 more
TL;DR: In this article, the diffusion of silver in CdS crystals between 100 °C and 300 °C with firing times below 20 h was studied, where a méthode of mesure capacitive non-destructive de léchantillon was used.