Journal ArticleDOI
Characteristics of WN/GaAs Schottky Contacts Formed by Reactive RF Sputtering
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TLDR
In this article, WN/GaAs contacts show good Schottky diode characteristics even after high temperature annealing, and both the ideality factor n and flat band barrier height B0C of contacts showed nearly constant values of about 1.1 and 1.15 eV, respectively, for annaling at about 800°C and for anannealing longer than 20 min.Abstract:
WN film formation by a reactive rf sputtering and WN/GaAs Schottky contact characteristics were investigated with the intent of forming a gate for self-aligned MESFETs. WN/GaAs contacts show good Schottky diode characteristics even after high temperature annealing. Both the ideality factor n and flat band barrier height B0C of contacts showed nearly constant values of about 1.1 and 1.15 eV, respectively, for annealing at about 800°C and for annealing longer than 20 min.read more
Citations
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Journal ArticleDOI
Compound semiconductor contact metallurgy
TL;DR: In this article, the role of limited solid phase reactions in the formation of doped and alloyed contacts to n-type GaAs was reviewed with emphasis on their role in the development of stable monocrystalline intermetallic films for application as buried metal layers in ballistic and quantum effect devices.
Journal ArticleDOI
Schottky barrier degradation of the W/GaAs system after high-temperature annealing
TL;DR: In this article, annealing of W/GaAs diodes at temperatures ranging from 100 to 900°C was investigated with current voltage (I•V) and capacitance voltage (C‐V) techniques.
Journal ArticleDOI
Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs
TL;DR: In this paper, the authors investigated the electrical properties of refractory metal nitride contacts on GaAs and showed that the barrier height for these contacts increases with annealing temperature and very low reverse leakage current.
Journal ArticleDOI
High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions
TL;DR: In this article, the structural and electrical properties of thin-film tungsten and reactively sputtered Schottky contacts to GaAs under high-temperature annealing conditions were investigated in an arsenic overpressure and flowing nitrogen ambient with and without a silicon dioxide capping layer.
Journal ArticleDOI
Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W)
TL;DR: In this paper, the authors systematically investigated the thermally induced interface interactions between (100) GaAs substrates and thin films of refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W).
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Schottky barrier height of sputtered TiN contacts on silicon
TL;DR: In this paper, the Schottky barrier height of sputtered TiN on both p - and n -type silicon was determined by I-V and C-V measurements and the experimental results were explained in terms of sputtering damage.
Proceedings ArticleDOI
Ti/W silicide gate technology for self-aligned GaAs MESFET VLSIS
TL;DR: In this article, a gate metallization of self-aligned enhancement and depletion GaAs MESFETs in fully-implanted 1024-bit GaAs fixed address static memory cell arrays is described.
Journal ArticleDOI
High Temperature Stable W-GaAs Schottky Barrier
TL;DR: The effect of annealing a W-GaAs (Se+ implanted) Schottky diode at high temperatures was investigated in this article, where it was shown that the diode showed an excellent stability and the ideal factor n and barrier height B remained more or less constant at values of 1.1-1.2 and 0.73 V, respectively, for the temperature variation of 800°C-950°C.