Journal ArticleDOI
Cofabrication of Vacuum Field Emission Transistor (VFET) and MOSFET
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TLDR
In this article, a nanoscale vacuum field emission transistor (VFET) and a metal-oxide-semiconductor field effect transistor (MOSFET), were co-fabricated on a silicon-on-insulator wafer.Abstract:
Co-fabrication of a nanoscale vacuum field emission transistor (VFET) and a metal-oxide-semiconductor field effect transistor (MOSFET) is demonstrated on a silicon-on-insulator wafer. The insulated-gate VFET with a gap distance of 100 nm is achieved by using a conventional 0.18-μm process technology and subsequent photoresist ashing process. The VFET shows a turn-on voltage of 2 V at a cell current of 2 nA and a cell current of 3 μA at the operation voltage of 10 V with an ON/OFF current ratio of 10 $^{4}$ . The gap distance between the cathode and anode in the VFET is defined to be less than the mean free path of electrons in air, and consequently, the operation voltage is reduced to be less than the ionization potential of air molecules. This allows the relaxation of the vacuum requirement. The present integration scheme can be useful as it combines the advantages of both structures on the same chip.read more
Citations
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Journal ArticleDOI
Nanoscale Vacuum Channel Transistor
TL;DR: In this work, sub 100-nm vacuum tubes are fabricated by using conventional silicon process and the gap formation methods beyond sub-lithographic limit are suggested and its current-voltage characteristics are presented.
Journal ArticleDOI
Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics
Shruti Nirantar,Taimur Ahmed,Guanghui Ren,Philipp Gutruf,Chenglong Xu,Madhu Bhaskaran,Sumeet Walia,Sharath Sriram +7 more
TL;DR: The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.
Journal ArticleDOI
Circuit switching with Quantum-Dot Cellular Automata
TL;DR: The design of a novel fault-tolerant circuit switched network based on Quantum-Dot Cellular Automata (QCA) is demonstrated and all those proposed QCA layouts have low energy dissipation, which is shown by exploring the dissipated energy by the layouts.
Journal ArticleDOI
Nanocommunication network design using QCA reversible crossbar switch
TL;DR: The design of reversible 2 × 2 crossbar switch and its realization in Quantum-Dot Cellular Automata (QCA) for the first time is dealt with.
Journal ArticleDOI
A Graphene‐Based Vacuum Transistor with a High ON/OFF Current Ratio
TL;DR: In this article, a graphene-based vacuum transistor (GVT) with a high ON/OFF current ratio is proposed and experimentally realized by employing electrically biased graphene as the electron emitter.
References
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Journal ArticleDOI
Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
TL;DR: In this paper, a gate-insulated vacuum channel transistor was fabricated using standard silicon semiconductor processing, and a photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10
Journal ArticleDOI
Work function and barrier heights of transition metal silicides
TL;DR: The work function of 13 polycrystalline transition metal silicides was measured by photo-emission in this article, and their values were discussed in relationship to their Schottky barrier heights on n-Si.
Journal ArticleDOI
Beam focusing for field-emission flat-panel displays
W.D. Kesling,Charles E. Hunt +1 more
TL;DR: In this article, a combination of finite element and finite difference techniques have been used to simulate the performance of micro-fabricated gated field emitters for flat-panel display applications.
Journal ArticleDOI
Variable-Body-Factor SOI MOSFET With Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control
TL;DR: In this article, a variable-body-factor fully depleted silicon-on-insulator (SOI) MOSFET was proposed, where the body factor is modulated by the substrate bias.
Journal ArticleDOI
A wide-bandwidth high-gain small-size distributed amplifier with field-emission triodes (FETRODEs) for the 10 to 300 GHz frequency range
TL;DR: In this paper, it was demonstrated that a suitable modification of the well-known thin-film field-emission cathode of C.A. Spindt (1948, 1976) into a FETRODE, a vacuum-type free-electron amplifier with a figure of merit superior to that achieved with triodes and FETs can be established.