Journal ArticleDOI
Comment on “Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range”
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This article is published in Solid-state Electronics.The article was published on 1996-01-01. It has received 182 citations till now. The article focuses on the topics: Schottky diode & Atmospheric temperature range.read more
Citations
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Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
Journal ArticleDOI
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
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Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts
TL;DR: In this paper, it was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH Φb0, increase of the ideality factor n and non-linearity in the activation energy plot at low temperatures.
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Ideal Graphene/Silicon Schottky Junction Diodes
Dhiraj Prasad Sinha,Ji Ung Lee +1 more
TL;DR: It is shown that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction, and the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottki junction.
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Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs
TL;DR: In this article, it was shown that the occurrence of Gaussian distribution of then barrier heights is responsible for the decrease of the apparent barrier height, increase of the ideality factor n and nonlinearity in the activation energy plot at low temperatures.
References
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Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
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Electron tunneling and contact resistance of metal-silicon contact barriers
TL;DR: In this paper, the contact resistance of Al and Pt on n-type Si over a wide range of doping concentrations (10 18 → 2 × 10 20 cm −3 ) has been measured at both room temperature and liquid nitrogen temperature.
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The Richardson constant for thermionic emission in Schottky barrier diodes
TL;DR: In this article, the Richardson equation appropriate to thermionic emission in Schottky barrier diodes is derived for a semiconductor having an energy band with ellipsoidal constant-energy surfaces in momentum space.
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Reverse current-voltage characteristics of metal-silicide Schottky diodes
J.M. Andrews,M.P. Lepselter +1 more
TL;DR: In this paper, the soft behavior of reverse biased Schottky barrier diodes has often been difficult to interpret quantitatively, and the development of metal-silicide devices with diffused guard rings has made it possible to verify experimentally an advanced theoretical model.