Journal ArticleDOI
Reverse current-voltage characteristics of metal-silicide Schottky diodes
J.M. Andrews,M.P. Lepselter +1 more
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In this paper, the soft behavior of reverse biased Schottky barrier diodes has often been difficult to interpret quantitatively, and the development of metal-silicide devices with diffused guard rings has made it possible to verify experimentally an advanced theoretical model.Abstract:
The soft behavior of reverse biased Schottky barrier diodes has often been difficult to interpret quantitatively. The development of metal-silicide devices with diffused guard rings has made it possible to verify experimentally an advanced theoretical model. Reverse characteristics can now be accurately predicted over wide ranges of current, voltage, barrier height and temperature. The theoretical description accounts for anisotropy of effective masses, scattering by optical phonons, and quantum mechanical reflection and tunneling at the metal-semiconductor interface. These considerations yield practical Richardson constants equal to 112 for electrons and 32 for holes in silicon. Absence of true saturation in the reverse characteristic is caused by an electric field dependence of the effective barrier height. In addition to the usual image-force correction, the barrier height is lowered by a newly recognized effect attributed to an electrostatic dipole layer at the metal-semiconductor interface. Experimental devices have been fabricated using RhSi, ZrSi2, and PtSi contacts, forming barriers in both n- and p-type silicon. The resulting structures have been found to be extremely stable and uniform; furthermore, the metal-semiconductor interface, produced by solid-solid chemical reaction, is believed to be free from intervening layers of oxide and other contaminants. When necessary to eliminate field-enhancement at the electrode periphery, diffused guard rings have been incorporated into the structures. Agreement between experimental data and theory is obtained over nearly five orders of magnitude in reverse bias and eleven orders of magnitude in reverse current density, usually with an rms deviation of less than 10 per cent.read more
Citations
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Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Journal ArticleDOI
The physics and chemistry of the Schottky barrier height
TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
Journal ArticleDOI
Bonds and Bands in Semiconductors: New insight into covalent bonding in crystals has followed from studies of energy-band spectroscopy
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Journal ArticleDOI
Electron transport of inhomogeneous Schottky barriers: A numerical study
TL;DR: In this paper, the authors present numerical simulations of the potential distribution and current transport associated with metal-semiconductor contacts in which the Schottky barrier height (SBH) varies spatially.
References
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Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI
Current transport in metal-semiconductor barriers
C.R. Crowell,S.M. Sze +1 more
TL;DR: In this paper, a theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force.
Journal ArticleDOI
The Richardson constant for thermionic emission in Schottky barrier diodes
TL;DR: In this article, the Richardson equation appropriate to thermionic emission in Schottky barrier diodes is derived for a semiconductor having an energy band with ellipsoidal constant-energy surfaces in momentum space.