Journal ArticleDOI
Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4
TLDR
In this paper, the carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic vapor phase epitaxy at 520-700°C with CCl4 as the dopant precursor were compared for the four possible combinations of trimethylgallium (TMGa), triethyl gallium (TEGa), arsine (AsH3), and tertiarybutylarsine (TBAs).Abstract:
The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic vapor phase epitaxy at 520–700 °C with CCl4 as the dopant precursor were compared for the four possible combinations of trimethylgallium (TMGa), triethylgallium (TEGa), arsine (AsH3), and tertiarybutylarsine (TBAs). Secondary ion mass spectrometry (SIMS), Hall measurements, and infrared absorption were used to characterize the GaAs:C layers. Very high C‐doping concentrations (∼1020 cm−3) could be obtained using either TMGa or TEGa and AsH3. The use of TBAs instead of AsH3 led to a significant reduction in carbon incorporation, by approximately a factor of 5–10 per mole of As precursor over the growth temperature range examined. Hydrogen at significant concentrations (1–6×1019 cm−3) was detected by SIMS in GaAs: C layers grown at ≤550 °C utilizing all four combinations of Ga/As precursors. The existence of electrically inactive C‐H complexes was confirmed by observation of the C‐H stretching mode at 2635 cm−1. A post‐growth...read more
Citations
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Journal ArticleDOI
Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties
TL;DR: In this paper, the authors reported the modification of electrical properties of chemical bath-deposited antimony sulphide (Sb 2 S 3 ) thin films by thermal diffusion of carbon.
Journal ArticleDOI
Passivation of carbon‐doped GaAs layers by hydrogen introduced by annealing and growth ambients
TL;DR: In this paper, the concentration of passivated carbon acceptors in GaAs epitaxial layers was determined by calibrating the intensity of infrared absorption due to C−H complexes, and it was shown that a brief anneal in an inert ambient at temperatures above 550°C is sufficient to activate C acceptors that are passivated by H.
Patent
Organometallic vapor-phase epitaxy process using (CH3)3 As and CCl4 for improving stability of carbon-doped GaAs
TL;DR: In this paper, the use of trimethylarsine in place of tertiary butyl arsine for low pressure organometallic vapor phase epitaxy of GaAs:C to enhance the carbon doping efficiency of CCl4 was discussed.
Journal ArticleDOI
Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD
S. A. Stockman,A. W. Hanson,S. M. Lichtenthal,M.T. Fresina,G. E. Höfler,K. C. Hsieh,G. E. Stillman +6 more
TL;DR: In this paper, a post-growth cooldown in an AsH3/H2 ambient was found to be the most important factor affecting the degree of passivation for single uncapped GaAs layers.
Journal ArticleDOI
Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p≳1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of postgrowth cooldown ambient.
References
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Journal ArticleDOI
Carbon diffusion in undoped, n‐type, and p‐type GaAs
TL;DR: In this paper, the effects of background doping, surface encapsulation, and As4 overpressure on carbon diffusion have been studied by annealing samples with 1000 A p-type carbon doping spikes grown within 1 μm layers of undoped (n−), Se-doped ( n+), and Mg-doping (p+) GaAs.
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Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs
TL;DR: Very high C incorporation (≳1020 cm−3) in GaAs was achieved by atmospheric pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using CCl4 as a dopant gas.
Journal ArticleDOI
Carbon doping of III–V compounds grown by MOMBE
Cammy R. Abernathy,Stephen J. Pearton,Fan Ren,William S. Hobson,T. R. Fullowan,Avishay Katz,A. S. Jordan,J. Kovalchick +7 more
TL;DR: In this article, a planar doping of InGaAs has been shown to achieve C diffusion coefficient of <10-16 cm2 s-1 at 950°C, in agreement with other reports.
Journal ArticleDOI
Electronic level of interstitial hydrogen in GaAs.
TL;DR: The carbon-hydrogen complex in GaAs is evidenced by its stretching local mode of vibration, and it is shown that even though carbon and hydrogen are present, this complex is not formed in n- type material; it only appears in p-type material.
Journal ArticleDOI
P-type doping limit of carbon in organometallic vapor phase epitaxial growth of gaas using carbon tetrachloride
TL;DR: The doping limit of carbon in GaAs grown by organometallic vapor phase epitaxy (OMVPE) using carbon tetrachloride (CCl4) as a p-type dopant source has been investigated by variation of the V/III ratio, growth temperature, and CCl4 flow rate.