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Open AccessProceedings ArticleDOI

Computer-aided phase-shift mask design with reduced complexity

Yong Liu, +1 more
- Vol. 1927, pp 477-493
TLDR
The main advantage of this object-oriented approach over the previous pixel-based solution is that it results in substantially larger assisting phase shift features, and is therefore easier to fabricate.
Abstract
We propose a new approach to systematic phase shift mask design. In doing so, we constrain the complexity of the mask at a pre-specified level by limiting the number of `features' on the mask. We then optimize the location, size, and phase of the features so as to achieve a desired intensity pattern on the wafer. The main advantage of this object-oriented approach over our previous pixel-based solution is that it results in substantially larger assisting phase shift features, and is therefore easier to fabricate. Our approach can also be used to design masks with proper bias and/or extension of the depth of focus. We show examples of contact hole, bright line, and chromeless line-space mask designs.

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Citations
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Proceedings ArticleDOI

RADAR: RET-aware detailed routing using fast lithography simulations

TL;DR: Guided by the EPE map, effective RET-aware detailed routing (RADAR) techniques are developed that can handle full-chip capacity to enhance the overall printability while maintaining other design closure.
Proceedings ArticleDOI

Fast, low-complexity mask design

TL;DR: This work builds upon the previous approach with special regard to computational efficiency and mask manufacturability to produce an Optical Proximity Correction (OPC) algorithm which operates orders of magnitude faster and produces simpler optimized masks.
Proceedings ArticleDOI

Subwavelength lithography and its potential impact on design and EDA

TL;DR: This tutorial paper surveys the potential implications of subwavelength optical lithography for new tools and flows in the interface between layout design and manufacturability and addresses the necessary changes in the design-to-manufacturing flow.
Proceedings ArticleDOI

OPC and PSM design using inverse lithography: a nonlinear optimization approach

TL;DR: The regularization framework is introduced; a useful tool which provides the flexibility to promote certain desirable properties in the solution and is employed to ensure that the estimated masks have only two or three transmission values and are also comparatively simple and easy to manufacture.
Proceedings ArticleDOI

Large-area phase-shift mask design

TL;DR: An algorithm that performs optimization for larger mask areas up to 100 X 100 micrometers 2.0 using the fast Fourier transform in changing to and from Fourier representations as necessary in the Hopkin's image intensity equations is devised.
References
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Proceedings ArticleDOI

0.3-micron Optical Lithography Using A Phase-Shifting Mask

TL;DR: In this paper, a phase-shifting mask was used to improve the resolution of an available i-line stepper using a phase shifting mask. And the effects of variations in the optical phase of the additional apertures were also investigated.
Journal ArticleDOI

Reduction Of Errors Of Microphotographic Reproductions By Optimal Corrections Of Original Masks

TL;DR: Using image restoration techniques, an algorithm is reported on for determining the optimum correction of original masks, which are to be reduced by a given microphotographic system, in order to compensate for the system's distortion.
Journal ArticleDOI

Binary and phase shifting mask design for optical lithography

TL;DR: In this paper, the authors proposed a number of pre-distorted mask design techniques for binary and phase-shifting masks, based on modeling the imaging mechanism of a stepper by the Hopkins equations and taking advantage of the contrastenhancement characteristics of photoresist.
Proceedings ArticleDOI

Use Of A Single Size Square Serif For Variable Print Bias Compensation In Microlithography: Method, Design, And Practice

TL;DR: In this paper, a simple design procedure using experimental data on printability of small squares is developed, which yields a serif design which, when added to reticle features, results in the area printed more closely to the nominal value and provides an optimal compromise between the compensation of the corner rounding effect and the associated process variability.
Journal ArticleDOI

Improved resolution of an i‐line stepper using a phase‐shifting mask

TL;DR: In this paper, a phase shifting mask is used to reduce the size of isolated space images for printing fine single spaces on a wafer, two additional line apertures with widths smaller than the critical dimension of the stepper lens are placed on each side of the main aperture of the mask.
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