Journal ArticleDOI
Computer studies of the effect of electron and hole current multiplication factors on the d.c. and microwave properties of symmetrical Si DDR IMPATT devices
M. Sridharan,S.K. Roy +1 more
TLDR
In this paper, the effect of carrier current multiplication on the d.c. field and current profiles and small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode was analyzed.Abstract:
Computer studies are presented on the effect of carrier current multiplication on the d.c. field and current profiles and the small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode, taking into account the realistic field dependence of ionization rate and drift velocity of charge carriers and also the effect of mobile space-charge. The d.c. field and current profiles indicate that the lowering of the electron current multiplication ( M n ) is more effective than the lowering of hole current Multiplication factor ( M p ) in modifying the d.c. properties of Si DDR devices. The computer-aided small-signal analysis carried out for the same structure shows that, a lowering of M n leads to a sharp decrease of the peak value of the small-signal negative conductance at a fixed d.c. current density which is accompanied by a shift of the frequency range of oscillation towards the higher frequency side.read more
Citations
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Journal ArticleDOI
A Study on the Effect of Electron and Hole Saturation Currents on the Negative Resistance Profiles, Negative Conductance and the Frequency of Operation of Millimeter Wave (W-Band) Double-Drift Silicon IMPATT Diodes
N Mazumder,S. K. Roy +1 more
TL;DR: In this article, the effect of reverse saturation current on the high frequency and low frequency of a silicon double-drift region (DDR) operating in the mm-wave range (W-band) was investigated.
References
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Journal ArticleDOI
The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
TL;DR: In this paper, the effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static I-V characteristics, where the composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length.
Journal ArticleDOI
Saturation current and large-signal operation of a read diode
TL;DR: In this article, the effect of the magnitude of the saturation current was investigated theoretically within the framework of Read's original analysis, and it was shown that with saturation currents as high as 1/100 of the bias current, the original efficiency prediction of 30 per cent was halved.
Journal ArticleDOI
Minority carrier storage and oscillation efficiency in read diodes
TL;DR: In this paper, a Schottky barrier is used to replace the p-n junction in order to avoid the back-diffuse storage effect of minority carriers in a Read diode.
Journal ArticleDOI
Leakage current enhancement in impatt oscillators by photoexcitation
TL;DR: In this paper, a technique for investigating the role of dynamic or effective leakage current in the r.w.f. performance of an impatt diode is described, which involves the design of a device structure and microwave cavity which permits the leakage current to be varied externally by photogeneration of carriers, and is compatible with c.
Journal ArticleDOI
Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon X-band symmetrical double-drift impatt diodes at high current densities
M. Sridharan,S.K. Roy +1 more
TL;DR: In this article, a computer study of the field and current profiles of silicon X-band symmetrical d.r.d. impatt diodes is presented, and the results show that there is considerable widening of the avalanche zone at high values of current density.