Creating non-volatile electronics by spintronics technology
Shinji Yuasa,Hitoshi Kubota,Akio Fukushima,Kay Yakushiji,Taro Nagahama,Yoshishige Suzuki,Koji Ando +6 more
TLDR
In this article, a novel high-performance magnetic tunnel junction device based on magnesium oxide (MgO) and the underlying mass-manufacturing technology was developed for the production of the magnetic heads of ultra-high density hard disk drives (HDD).Abstract:
We have been promoting Full Research to develop ultimate green IT devices based on non-volatile electronics. A core technology of non-volatile electronics is a non-volatile memory possessing features such as large capacity, high-speed operation, and high endurance. To develop such an ultimate non-volatile memory, we developed a novel high-performance magnetic tunnel junction device based on magnesium oxide (MgO) and the underlying mass-manufacturing technology. This technology has already been commercialized for the production of the magnetic heads of ultra-high density hard disk drives (HDD). Now we are also performing intensive R&D activities for developing the ultimate non-volatile memory called Spin-RAM.read more
Citations
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Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well
Masanori Nagase,Takashi Tokizaki +1 more
TL;DR: In this paper, the bistability characteristics of GaN/AlN resonant tunneling diodes (RTDs) grown on a sapphire substrate were investigated.
Journal ArticleDOI
Analysis of synthetic approaches described in papers of the journal Synthesiology
TL;DR: In this article, the authors discuss the use of synthetic biology in the field of biomedical sciences and propose an approach to synthesize synthetic data from the human body, which they call "synthesiology".
References
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Journal ArticleDOI
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TL;DR: b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.
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Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
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Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
TL;DR: In this paper, first-principles based calculations of the tunneling conductance and magnetoconductance of epitaxial ''mathrm{Fe}(100)|\mathm{MgO''(100), ''mgO''.
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Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
T. Miyazaki,Nobuki Tezuka +1 more
TL;DR: In this article, a giant magnetoresistance ratio of 30% at 4.2 K and 18% at 300 K was observed for the first time in an Fe/Al2O3/Fe junction.