Journal ArticleDOI
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TLDR
b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.Abstract:
Ferromagnetic-insulator-ferromagnetic tunneling has been measured in CoFe $/$A${\mathrm{l}}_{2}$${\mathrm{O}}_{3}$ $/$Co or NiFe junctions. At 295, 77, and 4.2 K the fractional change in junction resistance with magnetic field, $\ensuremath{\Delta}R/R$, is 11.8%, 20%, and 24%, respectively. The value at 4.2 K is consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films. $\ensuremath{\Delta}R/R$ changes little with a small voltage bias, whereas it decreases significantly at higher bias $(g0.1\mathrm{V})$, in qualitative agreement with Slonczewski's model. These junctions have potential use as low-power field sensors and memory elements.read more
Citations
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI
Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
The emergence of spin electronics in data storage
Claude Chappert,Claude Chappert,Albert Fert,Albert Fert,Frédéric Nguyen Van Dau,Frédéric Nguyen Van Dau +5 more
TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.