Journal ArticleDOI
Deep-level controlled lifetime and luminescence efficiency in GaP
TLDR
In this paper, the influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated and evidence that both these parameters are deep-level controlled is presented.Abstract:
The influence of deep levels on the minority‐carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep‐level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET−EV=0.75 eV and a hole capture cross section of approximately 4×10−14 cm2.read more
Citations
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Journal ArticleDOI
Detection of minority-carrier traps using transient spectroscopy
TL;DR: In this paper, a technique for measuring the properties of deep states which trap minority carriers in the depletion region of a Schottky barrier is described, which enables states to be separated according to their capture cross-sections as well as their emission properties.
Journal ArticleDOI
V. A two stage model for deep level capture
TL;DR: In this article, it is argued that capture of a carrier into the ground state of a deep, charged trap will be preceded by capture into a shallow, excited state, and the temperature dependences of capture and re-emission are worked out as consequences of this two step model.
Journal ArticleDOI
Deep‐state‐controlled minority‐carrier lifetime in n‐type gallium phosphide
TL;DR: In this article, the authors used capacitance as a measure of the charge state of the deep levels in the depletion region of a Schottky barrier, which is perturbed by the capture and subsequent thermal emission of minority carriers.
Journal ArticleDOI
Minority‐carrier lifetime measurements of efficient GaAlAs p‐n heterojunctions
TL;DR: In this article, the lifetime of Ga1−xAlxAs p−n heterojunctions has been investigated using temperature-difference method (ηRT, 1−3% at 6650 A), and the deep levels which govern the efficiency and the lifetime have been studied by I•V, C‐V, photocapacitance, impedance and electroluminescence measurements.
Journal ArticleDOI
Green luminescence efficiency in gallium phosphide
TL;DR: In this article, the present understanding of the operation of green-emitting GaP LEDs is reviewed, and quantitative analyses of the important mechanisms are described, including surface and interface recombination.
References
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Journal ArticleDOI
Determination of Deep Centers in Conducting Gallium Arsenide
TL;DR: In this paper, a technique has been developed for determining the properties of deep centers in conducting, n-type gallium arsenide, where a Schottky barrier is produced at the surface by means of a blocking contact of gold or electrolyte.
Journal ArticleDOI
Measurement of the Extrinsic Room‐Temperature Minority Carrier Lifetime in GaP
R. Z. Bachrach,O. G. Lorimor +1 more
TL;DR: In this article, the authors measured the minority carrier lifetime of GaP green material at room temperature and showed that the minority lifetime can be determined by unintentionally present recombination centers, which is the primary source of the green emission in non-nitrogen-doped GaP.
Journal ArticleDOI
Concentration dependence of the minority carrier diffusion length and lifetime in GaP
M L Young,D R Wight +1 more
TL;DR: In this article, the minority carrier diffusion length and lifetime have been determined in Zn-doped p-type and n-type GaP grown by liquid phase epitaxy, from the spectral response of Schottky diodes, and the decay of cathodoluminescence respectively.
Journal ArticleDOI
Kinetics of recombination in nitrogen‐doped GaP
TL;DR: The doping dependence of the bulk efficiency for both n− and p−type GaP:N has been investigated experimentally and theoretically as discussed by the authors, and it is shown that the efficiency should scale linearly with the minority-carrier lifetime, majority−carrier concentration, and the nitrogen concentration in the doping range.
Journal ArticleDOI
Minority‐carrier lifetimes and luminescence efficiencies in nitrogen‐doped GaP
TL;DR: In this paper, the authors measured the luminescence efficiency in air at 10 A/cm2 for a diode with a diffusion current density of 10 A cm2 and showed that significantly higher electroluminescent efficiencies approaching 0.3% are available for diodes at the same level of excitation.
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