scispace - formally typeset
Journal ArticleDOI

Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers

Reads0
Chats0
TLDR
In this article, a transverse-magnetic (TM)-mode dominated gain at the 1.5μm wavelength in semiconductor optical amplifiers with columnar quantum dots (QDs) was demonstrated.
Abstract
We demonstrated transverse-magnetic (TM)-mode dominated gain at the 1.5μm wavelength in semiconductor optical amplifiers (SOAs) with columnar quantum dots (QDs). We show that we can control the polarization dependence of optical gain in QD-SOAs by changing the height and tensile-strained barrier of columnar QDs. The TM mode gain is 17.3dB and a gain of over 10dB was attained over a wide wavelength range of 200nm. The saturation output power is 19.5dBm at 1.55μm.

read more

Citations
More filters
Journal ArticleDOI

Cross-Gain Modulation in Quantum-Dot SOA at 1550 nm

TL;DR: In this article, the cross-gain modulation (XGM) was used for wavelength conversion in an InAs/InGaAsP/InP columnar quantum-dot optical amplifier working in the 1550-nm spectral region.
Journal ArticleDOI

Quantum-Dot Semiconductor Optical Amplifiers With Polarization-Independent Gains in 1.5- $\mu$ m Wavelength Bands

TL;DR: In this article, a polarization independent gain of 0.5 dB with a gain of 10 dB and a saturation output power of 18 dBm at a wavelength of 1.55 mum was achieved.
Journal ArticleDOI

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

TL;DR: In this article, a review of the application of the macroscopic Maxwell-Bloch (MB) equations to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers, is presented.
Journal ArticleDOI

Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots

TL;DR: In this article, the electronic and polarization properties of columnar columnar InzGa1−zAs quantum dots (CQD) with high aspect ratio embedded in an InxGa 1−xAs/GaAs quantum well were analyzed.
Journal ArticleDOI

Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots

TL;DR: In this paper, a technique to control the polarization dependence of quantum dot (QD)-semiconductor optical amplifiers (SOAs) using vertically stacked self-assembled InAs QDs with moderately thick intermediate layers was developed.
References
More filters
Journal ArticleDOI

Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers

TL;DR: In this paper, a theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers (SOA's) based on the density matrix equations to treat electron-light interaction and the optical pulse propagation equations is presented.
Journal ArticleDOI

An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

TL;DR: In this paper, a semiconductor optical amplifier (SOA) having a gain of >25 dB, noise figure of 19 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm was realized by using quantum dots.
Journal ArticleDOI

Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots

TL;DR: In this article, the linear-polarization character of photoluminescence (PL) from the cleaved edge surface of columnar InAs/GaAs self-assembled quantum dots (QDs) was investigated.
Journal ArticleDOI

Artificial control of optical gain polarization by stacking quantum dot layers

TL;DR: In this article, a columnar InAs-GaAs quantum dot (QD) optical amplifier has been demonstrated by controlling the dot shape and the height of the QD has been controlled by stacking closely InAs islands to form columnar QD.
Journal ArticleDOI

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

TL;DR: In this article, the polarization properties of cleaved-edge photoluminescence (PL) from InAs/GaAs self-assembled quantum dots have been analyzed for the dots having 8 nm InxGa1−xAs capping layer with indium (In) composition of x=0 and 0.13.
Related Papers (5)