Journal ArticleDOI
Determination of proximity effect parameters in electron‐beam lithography
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TLDR
In this article, a new empirical method for determining proximity parameters in electron-beam lithography is introduced on the assumption that the proximity function is composed of two Gaussians, based on the clearance of resist after development in the nonexposed square region surrounded by the latticed exposed one.Abstract:
A new empirical method for determining proximity parameters in electron‐beam lithography is introduced on the assumption that the proximity function is composed of two Gaussians. This method is based on the clearance of resist after development in the nonexposed square region surrounded by the latticed exposed one. Since there are many identical patterns arranged two dimensionally, statistically averaged data of proximity parameters is obtained without undertaking scanning electron microscopy for linewidth measurements. Theoretical considerations are combined with the experimental observations in order to calculate proximity parameters by the use of the design pattern.read more
Citations
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Journal ArticleDOI
Exposure optimization in high-resolution e-beam lithography
P. Hudek,Dirk Beyer +1 more
TL;DR: A new method will be described, illustrating how to determine the optimized control point spread function (PSF) for proximity effect corrections (PEC) in e-beam lithography (EBL), which does not require any additional technology steps and uses only standard measuring techniques.
Journal ArticleDOI
True three-dimensional proximity effect correction in electron-beam lithography
Kasi Anbumony,Soo-Young Lee +1 more
TL;DR: In this article, a 3D point spread function is used to control the e-beam dose distribution within each circuit feature in order to achieve a desired 3D remaining resist profile after development.
Patent
Method for reducing the fogging effect
TL;DR: In this paper, a model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector.
Proceedings ArticleDOI
P1I-9 Passive 2.45 GHz TDMA based Multi-Sensor Wireless Temperature Monitoring System: Results and Design Considerations
TL;DR: In this article, a TDMA (time division multiple access) based wireless temperature monitoring system using 245 GHz passive surface acoustic wave (SAW) delay line sensors was presented. But the accuracy of the system was not analyzed.
Patent
A process for controlling the proximity effect correction
Hudek Peter,Dirk Beyer +1 more
TL;DR: In this paper, a model is fitted by individually changing at least the basic input parameters α,β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters.
References
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Journal ArticleDOI
Proximity effect in electron-beam lithography
TL;DR: In this article, a simple technique for the computation of the proximity effect in electron-beam lithography is presented, which gives results of the exposure intensity received at any given point in a pattern area using a reciprocity principle.
Journal ArticleDOI
Corrections to proximity effects in electron beam lithography. I. Theory
TL;DR: In this article, three corrections techniques are discussed: shape-dimension adjustment, region compensation, and self-consistent technique to compensate for proximity effects in regions between shapes, which leads to computational complexities and impracticalities.
Journal ArticleDOI
Proximity effect dependence on substrate material
TL;DR: In this paper, a Monte Carlo simulation for electron scattering trajectories was used to obtain the spatial distributions of absorbed energy in a resist layer, constituting the modeled proximity effect, are in good agreement with experimental results.
Journal ArticleDOI
Proximity parameters determination for electron beam lithography using a novel technique
TL;DR: In this article, a technique of acquiring proximity parameters is presented, which utilizes a design pattern of line density exposure wedge, written with electron-beam line scans of line densities ranging from 500 A to 5μm spacings.
Journal ArticleDOI
A new method for determining electron beam proximity correction parameters in a double layer siloxane‐diazo resist system
TL;DR: In this article, theoretical considerations are combined with experimental observations in order to show how proximity correction parameters can be measured in a double layer system where the top layer is a thin (1200 A) electron beam sensitive, negative resist.
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