Journal ArticleDOI
Determination of the Etching Kinetics for the Hydrofluoric Acid/Silicon Dioxide System
TLDR
In this paper, the etch kinetics for several silicon dioxide films in various hydrofluoric acid solutions have been studied, and expressions for etch rate as a function of acid concentration are presented.Abstract:
Etching kinetics for several silicon dioxide films in various hydrofluoric acid solutions have been studied. The low temperature silicon dioxide films were deposited at 450 o C and 300 mTorr in SiH 4 , O 2 , and PH 3 and annealed at 950 o C for 1 h. The thermal oxides were grown at 1100 o C in H 2 O and O 2 . Four hydrofluoric acid solutions were used: dilutions of 49 weight percent HF with deionized water, buffered hydrofluoric acid, surfactant-buffered hydrofluoric acid, and hydrofluoric acid/hydrochloric acid mixtures. Expressions for etch rate as a function of hydrofluoric acid concentration are presentedread more
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Journal ArticleDOI
Yolk/shell nanoparticles: classifications, synthesis, properties, and applications
Rahul Purbia,Santanu Paria +1 more
TL;DR: The YS NPs have better properties over simple core/shell or hollow NPs in various fields including biomedical, catalysis, sensors, lithium batteries, adsorbents, DSSCs, microwave absorbers etc., mainly because of the presence of free void space, porous hollow shell, and free core surface.
Journal ArticleDOI
Review of fiber-optic pressure sensors for biomedical and biomechanical applications.
Paulo Roriz,Paulo Roriz,Orlando Frazão,António B. Lobo-Ribeiro,Jose Luis Santos,José A. O. Simões +5 more
TL;DR: It is demonstrated the potentialities of Fiber-optic sensors to assess pressure in biomedical and biomechanical applications and the starting point to argue FOSs are an alternative or a substitution technology.
Journal ArticleDOI
Silicon dioxide sacrificial layer etching in surface micromachining
TL;DR: In this paper, an overview of the materials available in integrated circuit manufacturing is given, and the etch mechanism and sacrificial layer etch kinetics are reviewed, and selectivity issues important for the proper choice of layers and etchants are addressed.
Proceedings ArticleDOI
Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal
Ann Witvrouw,Bert Du Bois,Piet De Moor,Agnes Verbist,Chris Van Hoof,Hugo Bender,Christiaan Baert +6 more
TL;DR: In this paper, the etching of different Si-oxide, Si-nitride and metal layers in HF:H2O 24.5:75, BHF:glycerol 2:1 and vapor HF is studied and compared.
Journal ArticleDOI
Study on the Mechanism of Silicon Etching in HNO3-Rich HF/HNO3 Mixtures
TL;DR: In this paper, the effect of different parameters on the etch rate of silicon, for example, the HF/HNO3 mixing ratio, the silicon content of the etchant, temperature, and stirring speed in these solutions, has been examined and discussed in light of a previous study on etching in HF-rich HNO3 mixtures.