Journal ArticleDOI
Determination of the semiconductor doping profile right up to its surface using the MIS capacitor
K. Ziegler,E. Klausmann,S. Kar +2 more
TLDR
In this paper, the majority carriers in deriving relations for doping density as well as distance from the semiconductor surface, in terms of the space charge capacitance and its derivative with respect to the surface potential, are considered.Abstract:
A new method has been developed by which the doping profile of the semiconductor can be obtained right up to its surface. Contrary to the well known dC/dV-method, which is valid only in the depletion range, we have considered the majority carriers in deriving relations for doping density as well as distance from the semiconductor surface, in terms of the space charge capacitance and its derivative with respect to the surface potential. This method can be realized experimentally on any MIS structure. Measurements on MOS capacitors with steam grown oxides showed a drooping profile towards the SiSiO2 interface for boron doped and a rising one for phosphorus doped silicon. Post-oxidation annealing in dry nitrogen at 1200°C produced a uniform profile for phosphorus doped silicon.read more
Citations
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Journal ArticleDOI
A new dielectric isolation method using porous silicon
TL;DR: In this article, a new dielectric isolation technology is proposed based on the following characteristics of the porous silicon oxide formation: (1) p -type Si is more easily changed to porous silicon than n-type Si; (2) porous silicon is formed along the anodic reaction current flow line; (3) the change in volume of porous silicon after oxidation is relatively small; and (4) thick porous silicon films (10 μm) can be obtained easily.
Journal ArticleDOI
Interface states on semiconductor/insulator surfaces
TL;DR: In this paper, it was shown that impurities and defects in semiconductors are associated with energy levels in the forbidden gap, and it is well known that impurity and defect in a semiconductor can be associated with the energy levels of surface states.
Journal ArticleDOI
The electrical characterisation of semiconductors
TL;DR: In this paper, a review of measurement techniques for determining the electrical properties of semiconductors, especially silicon and the III-V compounds, is presented, at a time for continuing innovation in this area, to indicate present trends and material problems which may arise in the near future.
Book ChapterDOI
Electrical Noise as a Measure of Quality and Reliability in Electronic Devices
TL;DR: This chapter is devoted to an account of the success that has been obtained in using noise as a nondestructive indicator of reliability.
Journal ArticleDOI
High-accuracy MOS models for computer-aided design
TL;DR: An accurate description of the transverse carrier mobility with distance and normal electrical field in long-channel structures and the influence of substrate bias on carrier mobility in the surface-channel device is modeled theoretically and verified by experiment.
References
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Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
Surface states at steam-grown silicon-silicon dioxide interfaces
TL;DR: In this article, a method of determining the energy distribution of surface states at silicon-silicon dioxide interfaces by using low-frequency differential capacitance measurements of MOS structures is described.
Journal ArticleDOI
A quasi-static technique for MOS C-V and surface state measurements
TL;DR: In this paper, a quasi-static technique is proposed to obtain the thermal equilibrium MOS capacitance-voltage characteristics. The method is based on a measurement of the MOS charging current in response to a linear voltage ramp, so that the charging current is directly proportional to the incremental MOS capacity.
Journal ArticleDOI
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné,A. Vapaille +1 more
TL;DR: In this paper, the authors measured the apparent interface density in the whole band gap of silicon and showed that the apparent inteiface density can contain a contribution of defects unspecific of the interface, for instance, spatial fluctuation of the interfaces or silicon defects introducing a deep level in the band gap.
Journal ArticleDOI
The influence of debye length on the C-V measurement of doping profiles
W.C. Johnson,P.T. Panousis +1 more
TL;DR: In this article, the authors employed computer simulation of semiconductors with one-sided doping profiles that consist of high and low doped sections joined by steps and linear ramps and showed that a ramp cannot be distinguished accurately from a step unless its width is appreciably greater than a Debye length.
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