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Proceedings ArticleDOI

Development of a 0.1 micron linewidth fabrication process for x-ray lithography with a laser plasma source

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TLDR
In this paper, a process for fabricating 0.1 micron linewidth interdigital electrode patterns based on proximity x-ray lithography using a laser-plasma source was developed.
Abstract
A process has been developed for the purpose of fabricating 0.1 micron linewidth interdigital electrode patterns based on proximity x-ray lithography using a laser-plasma source. Such patterns are required in the manufacture of surface acoustic wave devices. The x-ray lithography was carried out using emission form a Cu plasma produced by a 15Hz, 248nm KrF excimer laser. A temporally multiplexed 50ps duration seed pulse was used to extract the KrF laser energy producing a train of several 50ps pulses spaced approximately 2ns apart within each output pulse. Each short pulse within the train gave the high focal spot intensity required to achieve high efficiency emission of keV x-rays. The first stage of the overall process involves the fabrication of x-ray mask patterns on 1 micron thick Si 3 N 4 membranes using 3-beam lithography followed by gold electroplating. The second stage involves x-ray exposure of a chemically amplified resist through the mask patterns to produce interdigital electrode patterns with 0.1 micron linewidth. Helium background gas and thin polycarbonate/aluminum filters are employed to prevent debris particles from the laser-plasma source form reaching the exposed sample. A computer control system fires the laser and monitors the x-ray flux from the laser-plasma source to insure the desired x-ray exposure is achieved at the resist. In order to reduce diffusion effects in the chemically amplified resist during the post exposure bake the temperature had to be reduced from that normally used. Good reproduction of 0.1 micron linewidth patterns into the x-ray resist was obtained once the exposure parameters and post exposure bake were optimized. A compact exposure station using flowing helium at atmospheric pressure has also been developed for the process, alleviating the need for a vacuum chamber. The details of the overall process and the compact exposure station will be presented.

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Patent

Big area laser modeling method and device for bionic periodic micro-nano structure surface

李保家
TL;DR: In this article, the authors present a micro nanofabrication of simple structure, convenient operation, low cost, periodic surface micro-nano structure is easy to control, high processing quality.
References
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Surface Acoustic Wave Devices and Their Signal Processing Applications

TL;DR: In this article, the authors present a survey of surface acoustic wave (SAW) devices and their applications in signal processing applications, as well as a discussion on the merits of SAW devices and applications.
Journal ArticleDOI

375‐GHz‐bandwidth photoconductive detector

TL;DR: In this paper, the authors report the development of a new, integrable photoconductive detector, based on low-temperature-grown GaAs, that has a response time of 1.2 ps and a 3-dB bandwidth of 375 GHz.
Journal ArticleDOI

X-ray lithography, where it is now and where it is going

TL;DR: In this paper, the x-ray lithography (XRL) systems presently developed, including the present state of source, resist, mask technology, and exposure tools, are described.
Proceedings ArticleDOI

keV x-ray source based on high-repetition-rate excimer-laser-produced plasmas (Poster Paper)

TL;DR: In this article, a 1.15 keV x-ray source based on plasma production using a high repetition rate picosecond KrF laser has been developed, using a train of 50 ps input pulses to extract a KrF amplifier module and an output train of pulses of energy up to 200 mJ.
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