Journal ArticleDOI
Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals
V. I. Talanin,Igor E. Talanin +1 more
TLDR
In this article, the diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals, and it has been shown that the model can provide necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.Abstract:
The diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals. It has been shown that, in the framework of the proposed kinetic model of defect formation, the formation and development of the defect structure during the growth of a crystal and its heat treatment can be considered within a unified context. The mathematical apparatus of the diffusion model can provide a basis for the development of a program package for the analysis and calculation of the formation of growth and postgrowth microdefects in dislocation-free silicon single crystals. It has been demonstrated that the diffusion model of the formation of growth and post-growth microdefects allows one to determine necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.read more
Citations
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Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)
V. I. Talanin,I. E. Talanin +1 more
TL;DR: In this paper, a comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out.
Journal ArticleDOI
On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory
V. I. Talanin,Igor E. Talanin +1 more
TL;DR: In this article, the adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered.
Journal ArticleDOI
High-Temperature Precipitation of Impurities within the Vlasov Model for Solids
V. I. Talanin,Igor E. Talanin +1 more
TL;DR: In this paper, a qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon, and it is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.
Journal ArticleDOI
Complexation in germanium in accordance with Vlasov's model for solids
V.I. Talanin,I. E. Talanin +1 more
TL;DR: Using Vlasov's model for solids, the diffusion model of defect formation in germanium was verified in this paper, where the possibility of applying Vlasod's model to describe complexation in dislocation-free gernium single crystals was shown.
References
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Solid-state 29Si MAS NMR studies of diatoms: structural characterization of biosilica deposits
TL;DR: Analysis of diatom species studied by solid-state 29Si MAS NMR spectroscopy did not reveal any differences regarding the molecular architecture of the silica, however, complete cells showed significantly smaller Q4:Q3 ratios than extracted cell walls, indicating the existence of intracellular pools of less condensed silica.
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A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
Jan Vanhellemont,Corneel Claeys +1 more
TL;DR: In this paper, a theoretical expression describing the influence of extrinsic and intrinsic point defect concentration and the strain energy on the critical radius of precipitates is derived, and an exponential distribution of the precipitate radii leads to analytical expressions for the content of precipitating species present under the form of sub− and supercritical precipitate nuclei.
Journal ArticleDOI
The coarsening and annihilation kinetics of dislocation loop
B. Burton,M. V. Speight +1 more
TL;DR: In this paper, an analysis of the annealing behavior of dislocation loops during irradiation is presented and compared with available experimental data, showing that the predictions based on isolated-loop behaviour are no longer valid.
Journal ArticleDOI
Nucleation of oxide precipitates in vacancy-containing silicon
V. V. Voronkov,R. Falster +1 more
TL;DR: In this article, the authors described the steady state nucleation of oxide precipitates by the distribution function C(m,n) over two basic size variables of an oxygen cluster: the number n of agglomerated oxygen atoms, and the number m of silicon atoms removed from the cluster location by vacancy consumption and self-interstitial emission.
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Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)
V. I. Talanin,I. E. Talanin +1 more