Journal ArticleDOI
Direct observation of Friedel oscillations around incorporated SiGa dopants in GaAs by low-temperature scanning tunneling microscopy.
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In this paper, the authors reported direct imaging of electrically active Si dopants near the GaAs(110) surface with a scanning tunneling microscope at a temperature of 4.2 K.Abstract:
We report the direct imaging of electrically active Si dopants near the GaAs(110) surface with a scanning tunneling microscope at a temperature of 4.2 K. In the filled state images, we observe patterns of rings which are centered around the individual doping atoms. We believe these ring patterns are induced by the individual impurities, which, due to their charge, disturb the local potential and cause oscillations in the charge density, also called Friedel oscillations. In the empty state images no Friedel oscillations can be observed.read more
Citations
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Journal ArticleDOI
Principles of the Theory of Solids
TL;DR: Ziman as mentioned in this paper presents an account of the consequences of the lattice periodicity in solids, which is essentially a textbook for the analysis of lattice lattice periods in physics.
Journal ArticleDOI
Nano-scale properties of defects in compound semiconductor surfaces
TL;DR: In this article, the atomic-scale properties of point defects and dopant atoms exposed on and in cleavage surfaces of III-V and II-VI semiconductors are reviewed.
Journal ArticleDOI
Giant Friedel Oscillations on the Beryllium(0001) Surface
TL;DR: Large-amplitude electron density oscillations were observed on a Be(0001) surface by means of variable-temperature scanning tunneling microscopy, and the amplitude of the waves for energies near the Fermi energy was anomalously large and inconsistent with the Friedel concept of screening.
Journal ArticleDOI
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing.
TL;DR: To prevent extensive Te loss at higher temperatures, where Mo6Te6 nanowire formation and substantial desorption-induced etching effects will take place simultaneously, surface and edge passivation with a monolayer graphene coverage on MoTe2 is tested and is greatly enhanced up to 500 °C without apparent structural defects.
Journal ArticleDOI
Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
Tomihiro Hashizume,Seiji Heike,Mark Lutwyche,Satoshi Watanabe,Ken Nakajima,Toshio Nishi,Yasuo Wada +6 more
TL;DR: In this article, the authors showed that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities, and they were able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.
References
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Journal ArticleDOI
Principles of the Theory of Solids
TL;DR: Ziman as mentioned in this paper presents an account of the consequences of the lattice periodicity in solids, which is essentially a textbook for the analysis of lattice lattice periods in physics.
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