Journal ArticleDOI
Dispersion tailoring and soliton propagation in silicon waveguides
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TLDR
The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method and it is shown that soliton-like pulse propagation is achievable in such a waveguide in the spectral region at approximately 1.55 microm.Abstract:
The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method. Extensive calculations indicate that an SOI waveguide can be designed to have its zero-dispersion wavelength near 1.5 microm with reasonable device dimensions. Numerical simulations show that soliton-like pulse propagation is achievable in such a waveguide in the spectral region at approximately 1.55 microm. The concept of path-averaged solitons is used to minimize the impact of linear loss and two-photon absorption.read more
Citations
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Journal ArticleDOI
Nonlinear optical phenomena in silicon waveguides: Modeling and applications
TL;DR: A unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications is provided.
Journal ArticleDOI
Nonlinear optics in photonic nanowires
TL;DR: Photonic nanowires provide the maximal confinement of light for index guiding structures enabling large enhancement of nonlinear interactions and group-velocity dispersion engineering, which makes them ideally suited for many nonlinear optical applications including the generation of single-cycle pulses and optical processing with sub-mW powers.
Journal ArticleDOI
Generation of correlated photons in nanoscale silicon waveguides.
Jay E. Sharping,Kim Fook Lee,Mark A. Foster,Amy C. Turner,Bradley S. Schmidt,Michal Lipson,Alexander L. Gaeta,Prem Kumar +7 more
TL;DR: These measurements represent a first step towards the development of tools for quantum information processing which are based on CMOS-compatible, silicon-on-insulator technology.
Journal ArticleDOI
Impact of two-photon absorption on self-phase modulation in silicon waveguides
Lianghong Yin,Govind P. Agrawal +1 more
TL;DR: An analytical solution is provided in the case in which the density of generated carriers is relatively low; it is useful for estimating spectral bandwidth of pulses at low repetition rates.
Journal ArticleDOI
Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides
TL;DR: Using fourth-order dispersion, wave-length conversion across four telecommunication bands from 1477 nm (S- band) to 1672 nm (U-band) is demonstrated with an efficiency of -12 dB.
References
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Book
Nonlinear Fiber Optics
TL;DR: The field of nonlinear fiber optics has advanced enough that a whole book was devoted to it as discussed by the authors, which has been translated into Chinese, Japanese, and Russian languages, attesting to the worldwide activity in the field.
Journal ArticleDOI
A continuous-wave Raman silicon laser
Haisheng Rong,Richard Jones,Ansheng Liu,Oded Cohen,Dani Hak,Alexander W. Fang,Mario J. Paniccia +6 more
TL;DR: The demonstration of a continuous-wave silicon Raman laser is demonstrated and it is shown that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide.
Journal ArticleDOI
An all-silicon Raman laser
Haisheng Rong,Ansheng Liu,Richard Jones,Oded Cohen,Dani Hak,Remus Nicolaescu,Alexander W. Fang,Mario J. Paniccia +7 more
TL;DR: The experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.
Journal ArticleDOI
Third-order nonlinearities in silicon at telecom wavelengths
TL;DR: In this article, the two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique.
Journal ArticleDOI
Observation of stimulated Raman amplification in silicon waveguides
TL;DR: In this article, the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides was reported, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide.