Journal ArticleDOI
Distributed mosfet amplifier using microstrip
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TLDR
In this paper, the authors view the input capacitance of a mosfet amplifier stage as an integral part of a microstrip transmission line, leading to a distributed amplifier of simple design.Abstract:
Viewing the input capacitance of a mosfet amplifier stage as an integral part of a microstrip transmission line, leads to a distributed amplifier of simple design. With today's mosfets, a bandwidth in excess of 500 MHz can be achieved ; it will be possible to extend this bandwidth substantially in the future by the use of mosfets with lower input capacitance. In addition, some data are given on transmission lines employing substrates of high dielectric permittivity.read more
Citations
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Journal ArticleDOI
Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design
TL;DR: In this article, the effect of the substrate resistivity on coplanar wave propagation is explained and the feasibility of extending CMOS designs beyond 10 GHz is investigated for analog applications.
Journal ArticleDOI
An integrated CMOS distributed amplifier utilizing packaging inductance
TL;DR: In this article, a three-stage distributed amplifier fabricated in a 0.8-/spl mu/m CMOS process is presented, which has a unity gain cutoff frequency of 4.7 GHz, a gain of 5 dB, with a gain flatness of /spl plusmn/1.2 dB over the 300-kHz to 3-GHz band.
Journal ArticleDOI
A DC-12 GHz Monolithic GaAsFET Distributed Amplifier
E.W. Strid,K.R. Gleason +1 more
TL;DR: In this article, a monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated, achieving 7-9dB gain with about 40-ps risetime and a -3dB bandwidth of 12 GHz, on a 0.91 X 0.97mm die.
Journal ArticleDOI
Silicon MOSFET distributed amplifier
TL;DR: The first reported integrated silicon MOSFET distributed amplifier is presented in this paper, where a three stage distributed amplifier was fabricated on a standard 0.8 µm silicon CMOS foundry process and packaged in a SSO-24 plastic surface mount package.
Proceedings ArticleDOI
CMOS distributed amplifiers
TL;DR: In this paper, the characteristics of broadband distributed amplifiers and traveling wave amplifiers implemented in CMOS technology are discussed, as well as the implications of the use of transmission lines to replace on-chip inductors.
References
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Journal ArticleDOI
Transmission-Line Properties of Parallel Strips Separated by a Dielectric Sheet
TL;DR: In this article, the shape ratio and the effective filling fraction of a sheet of dielectric material are computed in terms of exponential and hyperbolic functions, respectively, for a transmission line made of a symmetrical pair of strip conductors.
Journal ArticleDOI
Fringe field corrections for capacitors on thin dielectric layers
TL;DR: In this article, an approximate formula is derived which yields the fringe field correction explicitely in terms of the parameters of the electrode configuration for the frequently encountered case of plane parallel electrodes, of which one is circular and the other infinitely large.