Journal ArticleDOI
Doping dependence of the linewidth of spontaneous emission in GaAs laser diodes
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This article is published in International Journal of Electronics.The article was published on 1968-03-01. It has received 3 citations till now. The article focuses on the topics: Laser linewidth & Amplified spontaneous emission.read more
Citations
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Journal ArticleDOI
The relation between the diffusivity-mobility ratio and the linewidth of spontaneous emission in degenerate semiconductors at relatively high temperatures
A. N. Chakravarti,D. P. Parui +1 more
TL;DR: In this paper, the linewidth of spontaneous emission from degenerate semiconductors under strongly induced excitation at relatively high temperature was shown to be directly related to the diffusivity-mobility ratio of the electrons.
Journal ArticleDOI
Determination of the diffusivity-mobility ratio in degenerate semiconductors from linewidth measurements in laser diodes
A. N. Chakravarti,D. P. Parui +1 more
TL;DR: In this paper, it was shown that the diffusivity-mobility ratio of the electrons in degenerate semiconductors can be determined from a simple measurement of the linewidth of spontaneous emission preceding laser action in semiconductor junction lasers.
Journal ArticleDOI
A proposed method for determining the thickness of the active region in GaAs junction lasers
A. N. Chakravarti,D. P. Parui +1 more
TL;DR: In this article, a method for determining the thickness of the active region in GaAs junction lasers from measurements of the mobility and lifetime of the minority carriers and the linewidth of spontaneous emission preceding laser action is presented.
References
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Journal ArticleDOI
Physics of quantum electronics
TL;DR: In this article, a gathering of a small number of active scientists to discuss the physics of quantum electronics in a setting that would afford a maximum opportunity for close contact in a relaxed atmosphere with a minimum number of formally scheduled papers.
Journal ArticleDOI
Effect of Band Tails on Stimulated Emission of Light in Semiconductors
TL;DR: The dependence of the stimulated emission of radiation in semiconductors on temperature and impurity concentration has been calculated using a Kane model with a Gaussian band tail for the density of states as discussed by the authors.
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