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Journal ArticleDOI

Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells

C. Lanza, +1 more
- 01 Apr 1977 - 
- Vol. 24, Iss: 4, pp 392-396
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TLDR
In this article, the effect of grain size on the short-circuit current and AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells was investigated.
Abstract
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater.

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Journal ArticleDOI

Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells

TL;DR: In this paper, the authors describe the physics controlling recombination in polysilicon p-n-junction solar cells and develop analytical models characterizing this recombination, whose parameters can be related directly to experiment.
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Review of conductor-insulator-semiconductor (CIS) solar cells

TL;DR: The physics and technology of a new class of photovoltaic devices, namely the conductor-insulator-semiconductor (CIS) solar cells, are reviewed in this article.
Journal ArticleDOI

Fabrication and characterization of indium tin oxide (ITO)/polycrystalline silicon solar cells

TL;DR: In this paper, indium tin oxide (ITO)/polycrystalline silicon heterojunction solar cells have been fabricated utilizing neutralized ionbeam sputtering techniques, and they were analyzed by I•V characteristics and a scanning laser photoresponse technique.
Journal ArticleDOI

High-efficiency Cr-MIS solar cells on single and polycrystalline silicon

TL;DR: In this article, surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and poly-crystalline Si.
Journal ArticleDOI

Direct calculation of two‐dimensional collection probability in pn junction solar cells, and study of grain‐boundary recombination in polycrystalline silicon cells

TL;DR: In this paper, a method for the direct calculation of the two-dimensional collection probability in pn junction solar cells is presented, based on its reciprocity properties, the inhomogeneous continuity equation for excess carriers is transformed to a homogeneous partial differential equation (PDE) for the probability of carriers being collected in the external circuit.
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