Journal ArticleDOI
Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells
C. Lanza,Harold J. Hovel +1 more
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TLDR
In this article, the effect of grain size on the short-circuit current and AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells was investigated.Abstract:
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater.read more
Citations
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Journal ArticleDOI
Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells
Jerry G. Fossum,F.A. Lindholm +1 more
TL;DR: In this paper, the authors describe the physics controlling recombination in polysilicon p-n-junction solar cells and develop analytical models characterizing this recombination, whose parameters can be related directly to experiment.
Journal ArticleDOI
Review of conductor-insulator-semiconductor (CIS) solar cells
TL;DR: The physics and technology of a new class of photovoltaic devices, namely the conductor-insulator-semiconductor (CIS) solar cells, are reviewed in this article.
Journal ArticleDOI
Fabrication and characterization of indium tin oxide (ITO)/polycrystalline silicon solar cells
TL;DR: In this paper, indium tin oxide (ITO)/polycrystalline silicon heterojunction solar cells have been fabricated utilizing neutralized ionbeam sputtering techniques, and they were analyzed by I•V characteristics and a scanning laser photoresponse technique.
Journal ArticleDOI
High-efficiency Cr-MIS solar cells on single and polycrystalline silicon
TL;DR: In this article, surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and poly-crystalline Si.
Journal ArticleDOI
Direct calculation of two‐dimensional collection probability in pn junction solar cells, and study of grain‐boundary recombination in polycrystalline silicon cells
TL;DR: In this paper, a method for the direct calculation of the two-dimensional collection probability in pn junction solar cells is presented, based on its reciprocity properties, the inhomogeneous continuity equation for excess carriers is transformed to a homogeneous partial differential equation (PDE) for the probability of carriers being collected in the external circuit.
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