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Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping
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TLDR
In this article, the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2-35 at.Abstract:
We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er3+ ion are shown and discussed.read more
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Erbium in silicon
TL;DR: A review of the current state of what remains an active field can be found in this article, summarizing results from a range of studies conducted over the last few years, and pointing to further developments by considering the prospects for successful photonic integration of erbium and silicon.
Journal ArticleDOI
Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells
Eun-Chel Cho,Martin A. Green,Gavin Conibeer,Dengyuan Song,Young-Hyun Cho,Giuseppe Scardera,Shujuan Huang,Sang-Wook Park,Xiaojing Hao,Yidan Huang,Lap Van Dao +10 more
TL;DR: In this article, a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-filament silicon based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency.
Journal ArticleDOI
Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0 < x < 2)
TL;DR: In this paper, the hole contact of a-SiO2/c-Si interface was investigated for heterojunction solar cells, and the authors showed that high-bandgap aSiOx:H is unsuitable for hole contact due to electronic transport hindrance resulting from the large ΔEV.
Journal ArticleDOI
Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2
Salvatore Lombardo,Salvatore Coffa,Corrado Bongiorno,Corrado Spinella,E Castagna,Antonella Sciuto,Cosimo Gerardi,F Ferrari,Barbara Fazio,Stefania Privitera +9 more
TL;DR: In this article, the electrical transport and luminescence of Si dots embedded in SiO 2 have been investigated and it has been shown that the data of luminecence and electrical transport appear correlated with the dot size distribution.
Journal ArticleDOI
Absorption and transport properties of Si rich oxide layers annealed at various temperatures
D. Nesheva,Nicola Nedev,Nicola Nedev,Z. Levi,Rudolf Brüggemann,E. Manolov,K Kirilov,S. Meier +7 more
TL;DR: In this article, optical and infrared transmission measurements prove phase separation upon annealing at 700 and 1000 °C, respectively, and growth of amorphous Si nanoparticles with average size 2.6 eV.
References
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Book
Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
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The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
The Electrical Resistance of Binary Metallic Mixtures
TL;DR: In this paper, a theory for a random mixture is given, based on the assumption that each crystal acts as if surrounded by a homogeneous medium whose properties are those of the mixture.