Journal ArticleDOI
Electrical measurements and optical activation studies in Mg‐implanted GaAs
Y. K. Yeo,Y. S. Park,Phil Won Yu +2 more
TLDR
In this article, Mg ions were implanted in Cr•doped semi-insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature.Abstract:
Mg ions were implanted in Cr‐doped semi‐insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature. Surface‐carrier concentrations and mobilities have been measured at various postimplantation anneal temperatures using the van der Pauw Hall‐effect/sheet‐resistivity technique. Detailed profiles of depth as a function of ion dose and anneal temperature are presented. Also, the results of a study of the integrated intensity of Mg emission at various annealing temperatures and of depth profiles of the relative emission intensity of the ions obtained by the photoluminescence method are compared with results obtained from electrical measurements. In addition, compensation‐level analysis and a comparison of theoretical diffusion profiles with depth‐profile data have been made. p‐type layers have been produced for all except the lowest dose of 3×1012/cm2 after capping only (no postimplantation annealing) with pyrolytic Si3N4 encapsulants. Subsequent annealing up to 600 °C does not alter the e...read more
Citations
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Journal ArticleDOI
Doping of III–V compound semiconductors by ion implantation
TL;DR: The use of ion implantation to dope III-V compound semiconductors is growing in importance because it can be applied in the manufacture of discrete devices such as LEDs, lasers and FETs and increasingly, in the production of both linear and digital integrated circuits as mentioned in this paper.
Journal ArticleDOI
Rapid thermal annealing of Mg++As+ dual implants in GaAs
Kalpesh K. Patel,Brian J. Sealy +1 more
TL;DR: In this paper, the effects of dual implantation on the electrical properties of GaAs have been studied and a peak hole concentration approaching 4×1019 cm−3 was recorded for the dual implant annealed at 900 °C for 30 s.
Journal ArticleDOI
Correlation of electrical carrier and atomic profiles of Mg implants in GaAs
TL;DR: A comparative study of secondary ion mass spectrometry (SIMS) and electrical profiles for S-implanted GaAs has been made in this article, where it is suggested that unannealed implantation damage and S precipitation are responsible for the low electrical activation of S implants in GaAs at high dose, and residual surface defects may be a limiting factor at low dose.
Journal ArticleDOI
Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing
TL;DR: In this paper, the activation of high dose Mg+ implants (1×1015 cm−2, 100 keV) using capless rapid thermal annealing has been improved by the co-implantation of As+.
Journal ArticleDOI
Photoluminescence from Mg‐implanted, epitaxial, and semi‐insulating InP
TL;DR: In this article, the behavior of Mg implant in InP was studied, where Mg ions were implanted at an energy of 120 keV into vapor phase epitaxial (VPE) and Fe-doped, semi-insulating (SI) InP at doses of 1×1012-1×1015 cm−2 at room temperature.
References
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Book
Advances in Electronics and Electron Physics
L. Marton,R. L. Sproull +1 more
TL;DR: In this paper, the authors describe the use of the Kerre basis algorithm in mathematical morphology, R. Jones and I.D. Svalbe mirror-bank energy analyzers, S.P. Cahay and S.A. Bandyopadhyay fuzzy relations and applications, B. de Baets and E.S.
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Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI
The incorporation and characterisation of acceptors in epitaxial GaAs
TL;DR: In this paper, a systematic study of the incorporation of shallow acceptor dopants in highly refined VPE and LPE gallium arsenide has been carried out, which has resulted in an identification catalogue for the various elements which has been compared with the assignments of other workers.
Journal ArticleDOI
Excitation-dependent emission in Mg-, Be-, Cd-, and Zn-implanted GaAs
TL;DR: In this paper, the low-temperature properties of the excitationdependent (moving) emissions in Mg, Be-, Cd, and Zn-implanted GaAs layers are investigated with respect to changes in temperature and excitation intensity.