Journal ArticleDOI
Electromigration in single‐crystal aluminum films
F. d'Heurle,I. Ames +1 more
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TLDR
In this paper, it was shown that the formation of electromigration-induced open circuits in polycrystalline aluminum thin film conductors is caused predominantly by diffusion along grain boundaries.Abstract:
Electrical open circuits can be produced in current‐carrying polycrystalline aluminum thin film conductors as a result of electromigration phenomena. In this study, attempts have been made to induce such open circuits in comparable single‐crystal aluminum thin‐film conductors. It has not been possible to do so even after subjecting the latter to relatively high current densities for more than 10 000h. This observation adds strong support to the previous inference that the formation of electromigration‐induced open circuits in polycrystalline aluminum thin film conductors is caused predominantly by diffusion along grain boundaries.read more
Citations
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Electromigration in metals
Paul S. Ho,Thomas Kwok +1 more
TL;DR: In this article, an overview on the current understanding of electromigration in metals is provided. But the discussion is focused on studies in bulk metals and alloys and not on the studies in metallic thin films.
Journal ArticleDOI
Electromigration: A review
D.G. Pierce,P.G. Brusius +1 more
TL;DR: In this article, the authors examined the fundamental physics of electromigration and provided a basis for understanding the factors that affect the lifetimes under the various test conditions, and the care necessary to make fast, wafer-level tests an important process control tool is discussed.
Journal ArticleDOI
The evolution of cellular structures
TL;DR: The author presents an introduction to cellular structures, discusses the fundamental role played by geometry in the evolution of these systems and surveys the recent experimental and theoretical developments in the field.
Journal ArticleDOI
Linewidth dependence of electromigration in evaporated Al‐0.5%Cu
TL;DR: The linewidth dependence of electromigration damage has been evaluated for 2.5 cm−long, 1−4μm−wide, e−gun-evaporated Al−0.5%Cu conductions as mentioned in this paper.
Journal ArticleDOI
Electromigration and failure in electronics: An introduction
TL;DR: In this article, some fundamental aspects of electromigration phenomena as they have been studied in "bulk" metallic conductors are reviewed, and practical guidelines for the design of thin-film interconnections, and for the interpretation of accelerated test data are given.
References
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Journal ArticleDOI
Electromigration—A brief survey and some recent results
TL;DR: In this article, it is shown that positive gradients, in terms of electron flow, of temperature, current density, or ion diffusion coefficient foreshorten conductor life because they present regions where vacancies condense to form voids.
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Diffusion of Al26 and Mn54 in Aluminum
T. S. Lundy,J. F. Murdock +1 more
TL;DR: In this paper, the diffusion coefficients of Al26 and Mn54 in aluminum have been determined between 450° and 650°C. The exact solution to Fick's second law for the appropriate boundary conditions was used in treating the data.
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Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Journal ArticleDOI
Resistance monitoring and effects of nonadhesion during electromigration in aluminum films
R. Rosenberg,L. Berenbaum +1 more
TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.