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Journal ArticleDOI

Electromigration in Thin Al Films

I. A. Blech, +1 more
- 01 Feb 1969 - 
- Vol. 40, Iss: 2, pp 485-491
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TLDR
In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.
Abstract
The process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current. Due to electromigration, the Al ions migrate along the test strip from cathode to anode, and the actual opening up of holes near the cathode was observed. The rate of hole formation was used to measure an activation energy. For the test strips, a value of 0.7 eV was obtained. In addition, some physical aspects of hole formation, as well as material buildup in the form of hillocks and single‐crystal Al whiskers, were observed. Some of the whiskers, which were less than 1 μ in diameter, were seen to grow to unusual lengths, occasionally exceeding 50 μ.

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Citations
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Journal ArticleDOI

Electromigration in thin aluminum films on titanium nitride

TL;DR: In this paper, the aluminum electromigration drift velocity was measured at the temperature range 250-400°C and an activation energy of 0.65 eV was found for the drift velocity, which was explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends.
Journal ArticleDOI

Electromigration in metals

TL;DR: In this article, an overview on the current understanding of electromigration in metals is provided. But the discussion is focused on studies in bulk metals and alloys and not on the studies in metallic thin films.
Journal ArticleDOI

Reduction of electromigration in aluminum films by copper doping

TL;DR: In this article, it was shown that the lifetime of aluminum films subjected to high current densities at elevated temperatures can be increased by the addition of copper and that the presence of copper causes an appreciable retardation in the rate at which this overall combination of processes takes place, thereby producing a considerable increase in lifetime.
Journal ArticleDOI

Electromigration Damage in Aluminum Film Conductors

TL;DR: In this paper, the flux divergences in large and fine-grained aluminum films were analyzed in terms of the magnitude of vacancy supersaturations at various structural divergence points present in the films studied.
Journal ArticleDOI

Electromigration: A review

TL;DR: In this article, the authors examined the fundamental physics of electromigration and provided a basis for understanding the factors that affect the lifetimes under the various test conditions, and the care necessary to make fast, wafer-level tests an important process control tool is discussed.
References
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Book

Conduction of Heat in Solids

TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI

Current-induced marker motion in gold wires☆

TL;DR: In this paper, the motion of light transverse scratches, used as markers, has been observed on the surface of gold wires carrying current densities of about 104 A/cm2 for periods of several days.
Journal ArticleDOI

Sur l'electrolyse des alliages metalliques

TL;DR: In the presence of a champ electrique constant, un defaut ponctuel dans un metal en contact avec deux electrodes is soumis a force totale non nulle as discussed by the authors.
Journal ArticleDOI

Resistance monitoring and effects of nonadhesion during electromigration in aluminum films

TL;DR: In this article, two stages of migration were found, the first corresponding to gross mass transport, the second to void growth and stripe failure, and activation energy for the first stage was determined to be 0.5-0.6 eV from change-in-rate, changein-temperature tests, indicating boundary diffusion.
Journal ArticleDOI

Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films

TL;DR: In this paper, the process of electrotransport in Al thin films was directly observed by transmission electron microscopy, and it was found that hole formation occured in regions where the electron flow was in the direction of increasing temperature.