Journal ArticleDOI
Electron and neutron radiation damage effects on a two-phase CCD
Konstantin D. Stefanov,T. Tsukamoto,A. Miyamoto,Yasuhiro Sugimoto,N. Tamura,Kota Abe,Tadashi Nagamine,T. Aso +7 more
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TLDR
In this paper, the surface and bulk radiation damage effects on a two-phase charge-coupled device (CCD) operated in a multipinned phase (MPP) mode have been evaluated.Abstract:
Surface and bulk radiation damage effects on a two-phase charge-coupled device (CCD), operated in a multipinned phase (MPP) mode have been evaluated Two-phase CCD's are one of the candidates for application in the vertex detector of a future linear collider Flat-band voltage shifts, dark current, dark current spikes, and charge transfer efficiency (CTE) were studied on devices subjected to irradiation with fluences reaching 43/spl times/10/sup 12/ electrons/cm/sup 2/ and 89/spl times/10/sup 9/ neutrons/cm/sup 2/ An additional source of dark signal in electron irradiated devices was observed and explained by impact ionization by holes, released by tunneling from defect states near the Si-SiO/sub 2/ interface A model for the CTE in a two-phase CCD as a function of temperature, background charges, and clock timing is described Calculations based on the model are in good agreement with the experimentally determined values of CTE in electron and neutron irradiated CCD'sread more
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Universal damage factor for radiation-induced dark current in silicon devices
J.R. Srour,D.H. Lo +1 more
TL;DR: In this paper, a new damage factor for describing radiation-induced dark current in silicon devices is presented. But the authors do not specify the defects responsible for the dark current increases.
Journal ArticleDOI
Electronic dosimeters based on solid state detectors
TL;DR: In this article, the state of the art in electronic solid state dosimetry, including devices mainly based on semiconductors and diamond, is given, and an overview of the state-of-the-art in this area is given.
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Determination of in situ trap properties in CCDs using a "single-trap pumping" technique
TL;DR: In this article, the A-center trap was investigated in serial readout and the authors showed that the trap capture probability can be characterized in situ under standard operating conditions such that dramatic improvements can be made to optimization processes and modeling techniques.
Journal ArticleDOI
Radiation effects in charge-coupled device (ccd) imagers and cmos active pixel sensors
G. R. Hopkinson,A. Mohammadzadeh +1 more
TL;DR: In this paper, a review of radiation effects in silicon charge-coupled devices (CCDs) and CMOS active pixel sensors (APSs), both of which are used as imagers in the visible region, is presented.
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Proton-induced CCD charge transfer degradation at low-operating temperatures
TL;DR: In this paper, the authors measured the charge transfer inefficiency at charge-coupled device temperatures /spl sim/-100/spl deg/C and showed that proton-induced E-centers can be kept filled but other traps with energies 0.22-0.34 eV limit the achievable improvement in CTI.
References
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Journal ArticleDOI
Electron and hole ionization rates in epitaxial silicon at high electric fields
TL;DR: In this article, the ionization rates for electrons and holes were extracted from photomultiplication measurements on silicon p+n mesa diodes for electric fields of 2·0 × 105−7·7 × 105 V/cm at temperatures of 22, 50, 100 and 150°C.
Journal ArticleDOI
Defect production and lifetime control in electron and γ‐irradiated silicon
Stanley D. Brotherton,P. Bradley +1 more
TL;DR: In this paper, the effect of 1 − and 12 −MeV electron and Co60 γ irradiation has been made on power p−i−n diodes and Schottky barrier Diodes fabricated on the same starting material.
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Radiation damage in scientific charge-coupled devices
TL;DR: In this article, two important classes of radiation damage to the scientific CCD are discussed, namely bulk and ionization effects, and they are shown that ionization-induced damage induces a buildup of charge in the CCD's gate insulator causing the sensor's drive operating windows to shift (i.e., flat-band shift).
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Enhanced displacement damage effectiveness in irradiated silicon devices
J.R. Srour,R.A. Hartmann +1 more
TL;DR: In this article, the authors investigated enhanced displacement damage effectiveness in charge-coupled devices irradiated with 14-MeV neutrons and with 100-meV protons and observed that the thermal activation energies associated with single-particle-induced dark current events are observed to vary over the range 0.3-0.7 eV, with anomalously large events exhibiting relatively small values.
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A technique for suppressing dark current generated by interface states in buried channel CCD imagers
TL;DR: A technique for operating buried channel CCD imagers to achieve very low dark current with no loss in optical sensitivity is described, using a 4-phase CCD shift register operated in an imaging mode.