Journal ArticleDOI
Alloyed ohmic contacts to GaAs
Reads0
Chats0
TLDR
In this article, it is suggested that the observed (doping)−1 dependence of the contact resistance is due to spreading resistance domination of current paths through submicron regions where heavy doping occurs.Abstract:
The alloyed AuGe‐based contact is widely used to make ohmic connections to GaAs. It has been presumed that the regrown alloyed region is heavily doped so that carrier transport is by tunneling. The electrical and metallurgical properties of this heterogeneous system have been extensively studied and have been shown to be spatially nonuniform. Details of fabrication technique, analysis, and theoretical interpretation of its behavior will be discussed. It is suggested that the observed (doping)−1 dependence of the contact resistance is due to spreading resistance domination of current paths through submicron regions of the contact area where heavy doping occurs.read more
Citations
More filters
Journal ArticleDOI
Solar cell contact resistance—A review
Dieter K. Schroder,D.L. Meier +1 more
TL;DR: An overview of metal-semiconductor contacts on solar cells is presented in this article, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport.
Journal ArticleDOI
A survey of ohmic contacts to III-V compound semiconductors
TL;DR: In this article, a survey of the current state-of-the-art in the area of ohmic contact materials and properties to GaAs, InP, and GaN is presented along with critical issues pertaining to each semiconductor material.
Journal ArticleDOI
Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs
TL;DR: In this paper, the interface structures resulting from the alloying reactions between a Au/Ni/Au-Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscope.
Journal ArticleDOI
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
E. D. Marshall,B. Zhang,L. C. Wang,P. F. Jiao,W. X. Chen,T. Sawada,S. S. Lau,Karen L. Kavanagh,Thomas F. Kuech +8 more
TL;DR: In this paper, a low resistance nonalloyed ohmic contact to n−GaAs is formed which utilizes the solid-phase epitaxy of Ge through PdGe, and the conditions necessary to attain low specific contact resistivity (∼10−6 Ω cm2 on 1018 cm−3 n-GaAs) and on the interfacial morphology between the contact metallization and the GaAs substrate.
Journal ArticleDOI
Ohmic contacts to III V compound semiconductors: A review of fabrication techniques
TL;DR: In this paper, the authors present a review of papers on the ohmic contact realization onto III-V compounds and conclude that the main consequence of the compounds appearance is not a large change of the barrier height due to a change of interface chemistry but the rough interface resulting from particle precipitation.