Journal ArticleDOI
Electron trapping levels in silicon dioxide thermally grown on silicon
J.H. Thomas,F.J. Feigl +1 more
TLDR
In this paper, the effects on spectrally resolved response caused by variations in applied electrical field, wavelength sweep rate, and optical belaching are reported, and the experiments were made on metal-oxide-semiconductor capacitors.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1972-01-01. It has received 46 citations till now. The article focuses on the topics: Silicon & Band gap.read more
Citations
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Journal ArticleDOI
1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
TL;DR: In this paper, an approach for determining the hot-electron-limited voltages for silicon MOSFET's of small dimensions was described. But the approach was not followed in determining the room-temperature and the 77 K hotelectron limited voltages of a device designed to have a minimum channel length.
Journal ArticleDOI
Optically induced injection of hot electrons into SiO2
T. H. Ning,H. N. Yu +1 more
TL;DR: In this article, the effect of optically induced hot electron injection in MOS transistor structures to study electron traps in SiO2 films is described, by simultaneously monitoring the gate current and the surface channel conductance shift, information on the trapping efficiency, the capture cross sections, and the trap concentrations could be obtained.
Patent
Memory using insulator traps
Leonard Forbes,Joseph E. Geusic +1 more
TL;DR: In this article, a memory cell provides point defect trap sites in an insulator for storing data charges, where single electrons are stored on respective trap sites and a resulting parameter, such as transistor drain current, is detected.
Journal ArticleDOI
Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high‐field stressing
TL;DR: In this article, the location of positive trapped charge in the dry thermally grown films of SiO2 on Si in MOS structures has been investigated by combining the internal photoemissionvoltage dependence from both interfaces with the capacitancevoltage technique.
References
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Journal ArticleDOI
Handbook of Mathematical Functions
Book
Physics and technology of semiconductor devices
TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
Related Papers (5)
Photoinjection Studies of Charge Distributions in Oxides of MOS Structures
R. J. Powell,C. N. Berglund +1 more