Proceedings ArticleDOI
Electronic packaging of SiC MOSFET-based devices for reliable high temperature operation
Liang Yin,Cheng-Po Chen,Christopher James Kapusta,Reza Ghandi +3 more
- pp 1170-1173
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TLDR
This paper reviews the current packaging challenges for 400-500°C operation temperature, and presents a hermetic package solution for reliable operation.Abstract:
Silicon carbide (SiC) devices allow electronics to operate at high junction temperatures (>200°C) and high voltages (>10 kV). In addition, they provide faster switching and lower power losses than their silicon-based counterparts. Recently, MOSFET (metal-oxide semiconductor field effect transistor) devices were demonstrated to work up to 500°C. Robust packaging solutions are needed to take advantage of the extreme temperature capability in the areas of propulsion, power generation, and oil/natural gas exploration. This paper reviews the current packaging challenges for 400–500°C operation temperature, and presents a hermetic package solution for reliable operation.read more
Citations
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Proceedings ArticleDOI
Experimental evaluation of switching characteristics, switching losses and snubber design for a full SiC half-bridge power module
TL;DR: In this paper, the authors analyzed the switching performance of the full SiC half-bridge power module BSM120D12P2C005 from Rohm Semiconductor and found that a simple and well-known DC snubber circuit for half-branch configurations attenuates ringing without reducing the voltage overshoot.
Journal ArticleDOI
A Comparison between Si and SiC MOSFETs
TL;DR: In this paper, a comparison of the on-resistance and high-temperature performance between Si and SiC MOSFETs was made, and the analysis of the differences between the two materials came out from the perspective of material properties.
Dissertation
Evaluation of Switching Characteristics, Switching Losses and Snubber Design for a Full SiC Half-Bridge Power Module
TL;DR: In this paper, the authors analyzed the switching performance of the full SiC half-bridge power module BSM120D12P2C005 from Rohm Semiconductor and found that a simple and well-known DC snubber circuit for half-branch configurations attenuates ringing without reducing the voltage overshoot.
Journal ArticleDOI
Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application
K. Suganthi,S. Malarvizhi +1 more
TL;DR: In this article, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed, which has overall gain of 11.091 dB and noise figure of 2.673 dB.
References
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Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI
Silicon carbide benefits and advantages for power electronics circuits and systems
Ahmed Elasser,T.P. Chow +1 more
TL;DR: The benefits of using SiC in power electronics applications are looked at, the current state of the art of SiC is reviewed, and how SiC can be a strong and viable candidate for future power electronics and systems applications are shown.
Proceedings ArticleDOI
Reliability assessment of sintered nano-silver die attachment for power semiconductors
TL;DR: In this article, the authors show that even 5 s of sintering, a temperature of 225 °C, or a pressure as low as 2 MPa is sufficient to generate bonds comparable to solder and high pressure sinter joints if the remaining parameters (p, t and T, respectively) are set correctly.
Journal ArticleDOI
Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$
P. G. Neudeck,David J. Spry,Liang-Yu Chen,Glenn M. Beheim,Robert S. Okojie,Carl W. Chang,Roger D. Meredith,Terry L. Ferrier,Laura J. Evans,Michael J. Krasowski,Norman F. Prokop +10 more
TL;DR: In this article, the fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported.
Journal ArticleDOI
High Temperature Stability and the Performance Degradation of SiC MOSFETs
TL;DR: In this paper, the performance degradation of SiC MOSFETs during high-temperature operation is observed and discussed, and the degradation happens during both the high temperature storage and high temperature operation process.