Journal ArticleDOI
Epitaxial silicon carbide charge particle detectors
Reads0
Chats0
TLDR
In this paper, Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated and the collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias.Abstract:
The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a 241 Am source in vacuum led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias.read more
Citations
More filters
Journal ArticleDOI
Silicon carbide and its use as a radiation detector material
TL;DR: In this paper, a comprehensive review of the properties of epitaxial 4H silicon carbide polytype (4H-SiC) is presented, with particular emphasis on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation.
Journal ArticleDOI
New materials for radiation hard semiconductor dectectors
Paul J. Sellin,J. Vaitkus +1 more
TL;DR: In this paper, the authors present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments, carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility.
Journal ArticleDOI
Study of silicon carbide for X-ray detection and spectroscopy
Giuseppe Bertuccio,R. Casiraghi +1 more
TL;DR: In this article, the performance in X-ray spectroscopy using planar diode and drift detectors in SiC has been estimated in a wide range of operating temperature (up to 150/spl deg/C).
Journal ArticleDOI
High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors
TL;DR: In this paper, a linear energy response and excellent energy resolution have been obtained for various alpha emitters in the 3.18-MeV to 8.38-meV energy range.
Journal ArticleDOI
The fast neutron response of 4H silicon carbide semiconductor radiation detectors
TL;DR: In this article, fast neutron response measurements were reported for radiation detectors based on large-volume SiC p-i-n diodes, where multiple reaction peaks were observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector.
References
More filters
Journal ArticleDOI
Metal Schottky barrier contacts to alpha 6H:SiC
TL;DR: In this paper, the Schottky barrier height φB during contact formation was obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by currentvoltage and capacitance-voltage techniques.
Journal ArticleDOI
Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C
F. Lemeilleur,S.J. Bates,A. Chilingarov,C. Furetta,Maurice Glaser,Erik H.M. Heijne,Pierre Jarron,Claude Leroy,C. Soave,I Trigger +9 more
TL;DR: In this paper, the change of the diode reverse current, full depletion voltage and collection efficiency of the charge, deposited by relativistic electrons, are presented as a function of the proton fluence and of annealing time.
Journal ArticleDOI
Radiation damage due to niel in gaas particle detectors
TL;DR: In this article, a correlation between the observed reduction of charge collection efficiency (CCE) in GaAs particle detectors with the radiation dose from NIEL was demonstrated for detectors made from a wide range of material.
Journal ArticleDOI
Investigation of the radiation damage of GaAs detectors by neutrons and photons
W. Braunschweig,Th. Kubicki,K. Lübelsmeyer,D. Pandoulas,O. Syben,F. Tenbusch,M. Toporowsky,Th. Wilms,Bruno Wittmer,W.J. Xiao +9 more
TL;DR: In this article, surface barrier particle detectors, processed in Aachen using SI GaAs from several manufacturers, have been irradiated with neutrons (peak energy ∼ 1 MeV) up to fluences of 4.0 × 10 14 n/cm 2 and with photons from a 60 Co source with a dose of 100 Mrad.