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Journal ArticleDOI

Evidence for A Sharp Absorption Edge in Amorphous Ge

T. M. Donovan, +2 more
- 19 May 1969 - 
- Vol. 22, Iss: 20, pp 1058-1061
TLDR
A sharp optical absorption edge has been found at about 0.5 eV for amorphous Ge on a quartz substrate as discussed by the authors, which is comparable in sharpness with the direct edge of crystalline Ge.
Abstract
A sharp optical absorption edge has been found at about 0.5 eV for amorphous Ge on a quartz substrate. The edge is comparable in sharpness with the direct edge of crystalline Ge. No evidence for tailing of the band edges into the forbidden band or for a high density of states in the forbidden band is found by these optical measurements. A new density determination gives a value of 4.54\ifmmode\pm\else\textpm\fi{} 0.14 g/${\mathrm{cm}}^{3}$.

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Journal ArticleDOI

Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors

TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Journal ArticleDOI

New Technique for Investigating Noncrystalline Structures: Fourier Analysis of the Extended X-Ray—Absorption Fine Structure

TL;DR: In this paper, Fourier analysis was applied to the point-scattering theory of x-ray absorption fine structure to invert experimental data formally into a radial structure function with determinable structural parameters of distance from the absorbing atom, number of atoms, and widths of coordination shells.
Journal ArticleDOI

Absorption edge and internal electric fields in amorphous semiconductors

TL;DR: In this paper, a simple model based on the existence of internal electric fields is suggested to explain the exponential part of the absorption edge observed in many amorphous semiconductors.
Journal ArticleDOI

Stability and Exfoliation of Germanane: A Germanium Graphane Analogue

TL;DR: This material represents a new class of covalently terminated graphane analogues and has great potential for a wide range of optoelectronic and sensing applications, especially since theory predicts a direct band gap of 1.53 eV and an electron mobility ca.
Book ChapterDOI

Optical Properties of Amorphous Semiconductors

TL;DR: The sharp structure observed in the fundamental optical spectra of crystals, both vibrational and electronic, can be classified and interpreted by symmetry arguments based explicitly on the existence of long-range order as mentioned in this paper.
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